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1. (WO1997019462) VERTICALLY INTEGRATED SEMICONDUCTOR COMPONENT AND METHOD OF PRODUCING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1997/019462 International Application No.: PCT/DE1996/002108
Publication Date: 29.05.1997 International Filing Date: 06.11.1996
Chapter 2 Demand Filed: 17.06.1997
IPC:
H01L 21/58 (2006.01) ,H01L 21/768 (2006.01) ,H01L 23/48 (2006.01) ,H01L 23/532 (2006.01) ,H01L 25/065 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
58
Mounting semiconductor devices on supports
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532
characterised by the materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
065
the devices being of a type provided for in group H01L27/78
Applicants:
SIEMENS AKTIENGESELLSCHAFT [DE/DE]; Wittelsbacherplatz 2 D-80333 München, DE (AllExceptUS)
LAUTERBACH, Christl [DE/DE]; DE (UsOnly)
WEBER, Werner [DE/DE]; DE (UsOnly)
Inventors:
LAUTERBACH, Christl; DE
WEBER, Werner; DE
Priority Data:
195 43 540.022.11.1995DE
Title (DE) VERTIKAL INTEGRIERTES HALBLEITERBAUELEMENT UND HERSTELLUNGSVERFAHREN DAFÜR
(EN) VERTICALLY INTEGRATED SEMICONDUCTOR COMPONENT AND METHOD OF PRODUCING THE SAME
(FR) COMPOSANT A SEMI-CONDUCTEUR INTEGRE VERTICALEMENT ET SON PROCEDE DE PRODUCTION
Abstract:
(DE) Für ein vertikal (dreidimensional) integriertes Halbleiterbauelement wird vorgeschlagen, die Bauelementebenen auf verschiedenen Substraten zu realisieren, mittels einer Verbindungsschicht aus Benzocyclobuten zu verbinden un anschließend die elektrische Verbindung durch eine vertikale Kontaktstruktur zu erzeugen. Mit der Benzocyclobuten-Verbindungsschicht wird eine spannungsarme Verklebung in einem einfachen Verfahren ermöglicht.
(EN) The invention concerns a vertically (three-dimensionally) integrated semiconductor component, in which the component planes are produced on different substrates and connected by a connection layer of benzocyclobutene, and the electrical connection is then brought about by a vertical contact structure. The benzocyclobutene connection layer produces stress-free bonding in a simple manner.
(FR) L'invention concerne un composant à semi-conducteur intégré (en trois dimensions) verticalement. Il est prévu de réaliser des plans du composant sur différents substrats, de les lier à l'aide d'une couche de jonction en benzocyclobutène et de produire la connexion électrique par une structure de contact verticale. L'utilisation de la couche de jonction en benzocyclobutène permet de parvenir à une adhérence à contraintes réduites, selon un procédé simple.
Designated States: JP, KR, US
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: German (DE)
Filing Language: German (DE)
Also published as:
EP0862788US6146992US6313517JP2000500617 KR1019990071551