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1. (WO1997018592) OPTO-ELECTRONIC COMPONENT MADE FROM II-VI SEMICONDUCTOR MATERIAL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1997/018592 International Application No.: PCT/DE1996/002110
Publication Date: 22.05.1997 International Filing Date: 06.11.1996
Chapter 2 Demand Filed: 12.06.1997
IPC:
H01S 5/00 (2006.01) ,H01S 5/042 (2006.01) ,H01S 5/327 (2006.01) ,H01S 5/347 (2006.01) ,H01L 33/00 (2010.01) ,H01S 5/183 (2006.01) ,H01S 5/32 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
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DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
H ELECTRICITY
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BASIC ELECTRIC ELEMENTS
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DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
04
Processes or apparatus for excitation, e.g. pumping
042
Electrical excitation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
32
comprising PN junctions, e.g. hetero- or double- hetero-structures
327
in AIIBVI compounds, e.g. ZnCdSe-laser
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
34
comprising quantum well or superlattice structures, e.g. single quantum well lasers (SQW-lasers), multiple quantum well lasers (MQW-lasers), graded index separate confinement heterostructure lasers (GRINSCH-lasers)
347
in AIIBVI compounds, e.g. ZnCdSe-laser
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
18
Surface-emitting lasers (SE-lasers)
183
having a vertical cavity (VCSE-lasers)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
32
comprising PN junctions, e.g. hetero- or double- hetero-structures
Applicants:
SIEMENS AKTIENGESELLSCHAFT [DE/DE]; Wittelsbacherplatz 2 D-80333 München, DE (AllExceptUS)
FISCHER, Frank [DE/DE]; DE (UsOnly)
LUGAUER, Hans-Jürgen [DE/DE]; DE (UsOnly)
LITZ, Thomas [DE/DE]; DE (UsOnly)
LANDWEHR, Gottfried [DE/DE]; DE (UsOnly)
WAAG, Andreas [DE/DE]; DE (UsOnly)
Inventors:
FISCHER, Frank; DE
LUGAUER, Hans-Jürgen; DE
LITZ, Thomas; DE
LANDWEHR, Gottfried; DE
WAAG, Andreas; DE
Priority Data:
195 42 241.413.11.1995DE
Title (DE) OPTOELEKTRONISCHES BAUELEMENT IN II-VI-HALBLEITERMATERIAL
(EN) OPTO-ELECTRONIC COMPONENT MADE FROM II-VI SEMICONDUCTOR MATERIAL
(FR) COMPOSANT OPTOELECTRONIQUE REALISE DANS UN MATERIAU SEMI-CONDUCTEUR II-VI
Abstract:
(DE) Bauelement mit einer aktiven Schicht (4), Barriereschichten (3, 5), und ggf. einer Pufferschicht (2), von denen mindestens eine ein berylliumhaltiges Chalkogenid enthält. Die aktive Schicht ist eine mehrlagige Schicht, z.B. ein Übergitter aus BeTe/ZnSe oder aus BeTe/ZnCdSe. Bei Verwendung einer aktiven Schicht aus ZnSe auf einem Substrat (1) aus GaAs wird durch eine pseudo-gradierte Pufferschicht (2) unter Einbeziehung eines berylliumhaltigen Chalkogenides eine Anpassung mit niedrigem elektrischem Widerstand zwischen den III-V-Materialien und den II-VI-Materialien erzielt.
(EN) The component has an active layer (4), barrier layers (3, 5) and optionally a buffer layer (2) at least one of which contains a beryllium-containing chalcogenide. The active layer comprises several strata, for example a super-lattice of BeTe/ZnSe or BeTe/ZnCdSe. Where an active ZnSe layer on a GaAs substrate (1) is used, matching of the III-V materials and II-VI materials is achieved with low electrical resistance by a pseudo-graduated buffer layer (2) by incorporation of a beryllium-containing chalcogenide.
(FR) L'invention concerne un composant comprenant une couche active (4), des couches barrières (3, 5) et éventuellement une couche intermédiaire (2). Au moins une de ces couches renferme un chalcogénure contenant du béryllium. La couche active est une couche stratifiée avec, par exemple, un super-réseau en BeTe/ZnSe ou en BeTe/ZnCdSe. En cas d'utilisation d'une couche active en ZnSe sur un substrat (1) en GaAs, on obtient une adaptation des bandes électroniques avec une faible résistance électrique entre les matériaux III-V et II-VI en intercalant une couche intermédiaire (2) pseudo-graduée renfermant un chalcogénure contenant du béryllium.
Designated States: JP, KR, US
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: German (DE)
Filing Language: German (DE)
Also published as:
EP0861505US20010025954US6265734JP2000500288KR1019990067529