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1. (WO1997018583) VERY THIN PECVD SiO¿2? FOR RESISTOR PROTECTION IN 0.5 MICRON AND 0.35 MICRON TECHNOLOGIES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1997/018583 International Application No.: PCT/US1996/014341
Publication Date: 22.05.1997 International Filing Date: 05.09.1996
IPC:
C23C 16/02 (2006.01) ,C23C 16/40 (2006.01) ,C23C 16/44 (2006.01) ,H01L 21/316 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
02
Pretreatment of the material to be coated
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
Applicants:
ADVANCED MICRO DEVICES, INC. [US/US]; One AMD Place Mail Stop 68 Sunnyvale, CA 94088-3453, US
Inventors:
NGO, Minh, Van; US
Agent:
RODDY, Richard, J.; Advanced Micro Devices, Inc. One AMD Place Mail Stop 68 Sunnyvale, CA 94088-3453, US
Priority Data:
08/558,36716.11.1995US
Title (EN) VERY THIN PECVD SiO2 FOR RESISTOR PROTECTION IN 0.5 MICRON AND 0.35 MICRON TECHNOLOGIES
(FR) DEPOT TRES FIN DE SiO2 SELON LE PROCEDE PECVD EN PROTECTION DES RESISTANCES EN TECHNOLOGIES 0,5 MICRON ET 0,35 MICRON
Abstract:
(EN) A very thin (less than 350 angstrom) layer of silicon dioxide (SiO2) is produced using plasma-enhanced chemical vapor deposition (PECVD) by substantially increasing the time duration of pre-coat and soak time steps of the PECVD process and substantially reducing the flow of silane (SiH4), the applied high frequency power and the applied pressure in the PECVD process.
(FR) La présente invention concerne le recours au dépôt chimique en phase vapeur activé par plasma ou 'PECVD' $i((Plasma-Enhanced Chemical Vapor Deposition)) pour la production d'une couche très fine (moins de 350 angström) de dioxyde de silicium (SiO2). L'invention consiste à augmenter substantiellement la durée des opérations de pré-couchage et de trempe du dépôt PECVD, et à réduire substantiellement le débit de silane (SiH4), la puissance haute fréquence appliquée, ainsi que la pression appliquée pendant le dépôt PECVD.
Designated States: JP, KR
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: English (EN)
Filing Language: English (EN)