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1. (WO1997017732) VARACTOR WITH ELECTROSTATIC BARRIER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1997/017732 International Application No.: PCT/US1996/018670
Publication Date: 15.05.1997 International Filing Date: 06.11.1996
Chapter 2 Demand Filed: 09.06.1997
IPC:
H01L 29/93 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92
Capacitors with potential-jump barrier or surface barrier
93
Variable-capacitance diodes, e.g. varactors
Applicants:
ENDGATE CORPORATION [US/US]; 321 Soquel Way Sunnyvale, CA 94086-4102, US
Inventors:
STONEHAM, Edward, B.; US
Agent:
ADAMSON, Steven, J.; P.O.Box 1909 Eugene, OR 97440, US
Priority Data:
08/555,77709.11.1995US
Title (EN) VARACTOR WITH ELECTROSTATIC BARRIER
(FR) VARACTOR AVEC UNE BARRIERE ELECTROSTATIQUE
Abstract:
(EN) A varactor (100) comprising a substrate of semiconductor material (10) on which is grown both the electrostatic barrier having a first layer (22 or 26) of material doped with donor impurities and a second layer (24) of material doped with acceptor impurities and a depletable layer (30). In other embodiments of the present invention varactors are provided that include a plurality of barrier and depletable layer pairs grown in a serial arrangement. Both homojunction and heterojunction varactors are disclosed.
(FR) L'invention concerne un varactor (100) comprenant un substrat en un matériau semi-conducteur (10) sur lequel on développe une barrière électrostatique ayant une première couche (22 ou 26) de matériau dopé avec des impuretés de type donneur, une seconde couche (24) de matériau dopé avec des impuretés de type accepteur et une couche épuisable (30). Dans d'autres formes d'exécution de la présente invention, le varactor comprend une pluralité de paires de couches barrières et de couches épuisables formant un système sériel. L'invention concerne des varactors à homojonction et à hétérojonction.
Designated States: AU, BR, CA, CN, DE, DK, ES, GB, JP, KR, MX, SE
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0860028JP2000500287AU1997010794