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1. (WO1997017725) METHOD OF ETCHING A POLYSILICON PATTERN
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1997/017725 International Application No.: PCT/US1996/014323
Publication Date: 15.05.1997 International Filing Date: 06.09.1996
IPC:
H01L 21/3213 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321
After-treatment
3213
Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
Applicants:
ADVANCED MICRO DEVICES, INC. [US/US]; One AMD Place Mail Stop 68 Sunnyvale, CA 94088-3453, US
Inventors:
BELL, Scott; US
Agent:
RODDY, Richard, J.; Advanced Micro Devices, Inc. One AMD Place Mail Stop 68 Sunnyvale, CA 94088-3453, US
Priority Data:
08/554,41208.11.1995US
Title (EN) METHOD OF ETCHING A POLYSILICON PATTERN
(FR) PROCEDE DE GRAVURE D'UN MOTIF EN SILICIUM POLYCRISTALLIN
Abstract:
(EN) Pitting in active regions along the edges of a gate electrode when etching a composite comprising an anti-reflective coating on polysilicon is avoided by etching the anti-reflective coating with an etchant that forms a protective passivating coating on at least the sidewalls of the etched anti-reflective pattern and on the underlying polysilicon layer. Subsequently, anisotropic etching is conducted to remove the protective passivating coating from the surface of the polysilicon layer, leaving the etched anti-reflective pattern protected from the main polysilicon etch on at least its sidewalls by the passivating coating to prevent interaction. In another embodiment, the anti-reflective coating is etched without formation of a passivating coating, and the polysilicon layer subsequently etched with an etchant that forms a passivating coating.
(FR) Cette invention concerne un procédé permettant d'éviter les piqûres dans les régions actives le long des bords d'un électrode de grille, lors de la gravure d'un matériau composite comprenant une couche anti-réfléchissante sur du silicium polycristallin. Ce procédé consiste à graver la couche anti-réfléchissante à l'aide d'un agent de gravure qui va former une couche de protection et de passivation sur les parois latérales, au moins, du motif anti-réfléchissant gravé, ainsi que sur la couche sous-jacente de silicium polycristallin. Une gravure anisotropique permet ensuite d'éliminer la couche de protection et de passivation de la surface de la couche de silicium polycristallin, le motif anti-réfléchissant gravé restant protégé, sur ses parois latérales au moins, par la couche de passivation contre la gravure principale du silicium polycristallin, ceci afin d'éviter toute interaction. Dans un autre mode de réalisation, la couche anti-réfléchissante est gravée sans que l'on procède à la formation d'une couche de passivation, la couche de silicium polycristallin étant ensuite gravée à l'aide d'un agent de gravure formant une couche de passivation.
Designated States: JP, KR
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0804804