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1. (WO1997017716) AN ION IMPLANTER WITH POST MASS SELECTION DECELERATION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1997/017716 International Application No.: PCT/GB1996/002740
Publication Date: 15.05.1997 International Filing Date: 08.11.1996
IPC:
H01J 37/30 (2006.01) ,H01J 37/317 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30
Electron-beam or ion-beam tubes for localised treatment of objects
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30
Electron-beam or ion-beam tubes for localised treatment of objects
317
for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, CA 95054, US (AllExceptUS)
ENGLAND, Jonathan, Gerald [GB/GB]; GB (UsOnly)
MOFFATT, Stephen [GB/GB]; GB (UsOnly)
ARMOUR, David, George [GB/GB]; GB (UsOnly)
FOAD, Majeed [GB/GB]; GB (UsOnly)
Inventors:
ENGLAND, Jonathan, Gerald; GB
MOFFATT, Stephen; GB
ARMOUR, David, George; GB
FOAD, Majeed; GB
Agent:
BOULT WADE TENNANT; 27 Furnival Street London EC4A 1PQ, GB
Priority Data:
9522883.908.11.1995GB
9616240.901.08.1996GB
Title (EN) AN ION IMPLANTER WITH POST MASS SELECTION DECELERATION
(FR) IMPLANTEUR IONIQUE A RETARD APRES SELECTION MASSIQUE
Abstract:
(EN) A post mass selection decel lens (9) is located between the exit aperture (55) of the mass selection chamber (47) and the entry (74) to the electron confinement tube (69) of the PFS. The lens comprises a first electrode (65) at the substrate potential, a second electrode (60) at the flight tube potential, and a field electrode (61) between them at a relatively high (negative) potential sufficient to provide focusing of the ion beam at the first electrode. The first electrode is larger than the beam to avoid deflecting ions at the periphery of the aperture out of the beam. The first electrode has an aperture which is smaller than that of the field electrode. The field electrode is at least -5kV relative to the flight tube, that is substantially more than required for electron suppression. Additional apertures are provided between the process chamber and the mass selection chamber to improve evacuation.
(FR) Une lentille de retard (9) après sélection massique est placée entre le diaphragme de sortie (55) de la chambre (47) de sélection massique et l'orifice d'entrée (74) d'un tube de confinement ionique du système PFS, à arrosage de plasma (plasma Flood System). La lentille comprend une première électrode (65) au potentiel du substrat, une seconde électrode (60) au potentiel du tube d'arrosage au plasma et une électrode de champ (61) placée entre celles-ci à un potentiel (négatif) relativement élevé et suffisant pour assurer la focalisation du faisceau d'ions au niveau de la première électrode. La première électrode est plus grande que le faisceau pour éviter la dispersion des ions du faisceau au niveau de la périphérie du diaphragme. Le diaphragme de la première électrode est plus petit que celui de l'électrode de champ. L'électrode de champ est à au moins -5kV par rapport au tube d'arrosage au plasma, ce qui est sensiblement plus que ce qui est nécessaire pour provoquer la disparition des électrons. D'autres diaphragmes placés entre la chambre de traitement et la chambre de sélection massique améliorent l'évacuation.
Designated States: DE, JP, KR, US
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
US5969366JPH10512710 KR1019980701341