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1. (WO1997016855) LIGHT-EMITTING DIODE WITH DIVIDED LIGHT-EMITTING REGION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1997/016855 International Application No.: PCT/SE1996/001392
Publication Date: 09.05.1997 International Filing Date: 30.10.1996
IPC:
H01L 33/02 (2010.01) ,H01L 33/08 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
08
with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Applicants:
MITEL SEMICONDUCTOR AB [SE/SE]; Box 520 S-175 26 Järfälla, SE (AllExceptUS)
NETTELBLADT, Hans [SE/SE]; SE (UsOnly)
WIDMAN, Michael [SE/SE]; SE (UsOnly)
Inventors:
NETTELBLADT, Hans; SE
WIDMAN, Michael; SE
Agent:
LUNDBLAD VANNESJÖ, Katarina; Asea Brown Boveri AB S-721 78 Västerås, SE
Priority Data:
9503879-003.11.1995SE
Title (EN) LIGHT-EMITTING DIODE WITH DIVIDED LIGHT-EMITTING REGION
(FR) DIODE EMETTRICE DE LUMIERE AVEC UNE REGION EMETTRICE DE LUMIERE DIVISEE
Abstract:
(EN) A device for generating light with the aid of a semiconducting material consisting of two electrically conducting contact layers (1, 2) and at least one layer, arranged therebetween, of semiconducting material which comprises a light-emitting semiconducting layer (4) which is divided into at least two permanently parallel-connected sub-regions, delimited by semiconducting material (5) with a higher energy gap than the light-emitting layer or delimited by ion-implanted semiconducting material (6), wherein the delimiting material shall prevent the propagation of dislocations between the sub-regions.
(FR) L'invention concerne un dispositif pour générer de la lumière à l'aide d'un matériau semi-conducteur constitué de deux couches de contact conductrices d'électricité (1, 2) et d'au moins une couche disposée entre elles, constitutée d'un matériau semi-conducteur comprenant une couche semi-conductrice émettrice de lumière (4) divisée en au moins deux sous-régions connectées en parallèle de manière permanente et séparées par un matériau semi-conducteur (5) ayant une largeur de bande interdite plus large que la couche émettrice de lumière ou par un matériau semi-conducteur (6) implanté par des ions, le matériau de séparation empêchant la propagation de dislocations entre les sous-régions.
Designated States: CA, JP, US
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: English (EN)
Filing Language: Swedish (SV)
Also published as:
EP0801818US6215132CA2212624