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1. (WO1997016854) SEMICONDUCTOR COMPONENT WITH PRISMATIC CHANNEL AREA
Latest bibliographic data on file with the International Bureau

Considered void 04.06.1997


Pub. No.: WO/1997/016854 International Application No.: PCT/EP1996/004755
Publication Date: 09.05.1997 International Filing Date: 01.11.1996
IPC:
H01L 21/336 (2006.01) ,H01L 29/423 (2006.01) ,H01L 29/786 (2006.01) ,H01L 31/0288 (2006.01) ,H01L 31/0352 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
423
not carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
028
including, apart from doping material or other impurities, only elements of the fourth group of the Periodic System
0288
characterised by the doping material
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0352
characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
Applicants:
AMO GMBH [DE/DE]; Huyskensweg 25 D-52074 Aachen, DE (AllExceptUS)
GONDERMANN, Jörg [DE/DE]; DE (UsOnly)
ROSKOS, Hartmut [DE/DE]; DE (UsOnly)
RÖWER, Thomas [DE/DE]; DE (UsOnly)
KURZ, Heinrich [DE/DE]; DE (UsOnly)
SPANGENBERG, Bernd [DE/DE]; DE (UsOnly)
Inventors:
GONDERMANN, Jörg; DE
ROSKOS, Hartmut; DE
RÖWER, Thomas; DE
KURZ, Heinrich; DE
SPANGENBERG, Bernd; DE
Agent:
COHAUSZ & FLORACK; Kanzlerstrasse 8a D-40472 Düsseldorf, DE
Priority Data:
195 40 639.701.11.1995DE
Title (DE) HALBLEITER-BAUELEMENT MIT PRISMENFÖRMIGEM KANALBEREICH
(EN) SEMICONDUCTOR COMPONENT WITH PRISMATIC CHANNEL AREA
(FR) COMPOSANT A SEMI-CONDUCTEUR DONT LA ZONE DU CANAL EST EN FORME DE PRISME
Abstract:
(DE) Die Erfindung betrifft ein Bauelement und ein Verfahren zur Herstellung eines Halbleiter-Bauelementes in Planartechnologie bestehend aus einem Substrat (1), insbesondere einem Silizium-Substrat, und darauf ausgebildeten zueinander beabstandeten isolierten Anschlußbereichen (A), zwischen denen isoliert zu den Anschlußbereichen (A) ein elektrisch leitfähiger Kanalbereich (K) ausgebildet ist. Zur Ermöglichung einer weiteren Integration, ohne daß sich die elektrischen Kennwerte gegenüber herkömmlich hergestellten Bauelementen verschlechtern, ist vorgesehen, daß der sich zwischen den Anschlußbereichen (A) erstreckende dreidimensional ausgebildete Kanalbereich (K) die Form eines Prismas aufweist, dessen Querschnittsfläche mindestens drei Ecken aufweist, wobei eine der Prismenrandflächen parallel zur Substratebene angeordnet ist.
(EN) The invention concerns a semiconductor component and a method of manufacturing the same in planar technology, the component comprising a substrate (1), in particular a silicon substrate, and formed thereon mutually spaced isolated connection areas (A), between which an electrically conductive channel area (K) is formed such that it is isolated from these connection areas (A). According to the invention, in order to permit further integration without impairing the electrical parameters with respect to components manufactured in a conventional manner, the three-dimensional channel area (K) formed between the connection areas (A) is prismatic and its cross-sectional area has at least three corners. One of the lateral surfaces of the prism is disposed parallel to the substrate plane.
(FR) L'invention concerne un composant et un procédé de production d'un composant à semi-conducteur en technologie planaire. Ce composant comprend un substrat (1), notamment un substrat en silicium et des zones de connexion (A) isolées, situées à distance les unes de autres, formées sur le substrat, entre lesquelles est formée une zone de canal (K) électroconductrice, isolée par rapport aux zones de connexion (A). Afin de perfectionner le mode de montage intégré de ce composant, sans entraîner pour autant de dégradation de ses paramètres électriques par rapport aux composants produits de manière classique, il est prévu que la zone du canal (K) qui s'étend entre les zones de connexion (A) et est en trois dimensions, présente la forme d'un prisme avec une surface transversale comportant au moins trois coins. Une des surfaces marginales du prisme est parallèle au plan du substrat.
Designated States: JP, US
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: German (DE)
Filing Language: German (DE)