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1. (WO1997016246) UNIBODY GAS PLASMA SOURCE TECHNOLOGY
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1997/016246 International Application No.: PCT/US1996/017315
Publication Date: 09.05.1997 International Filing Date: 30.10.1996
Chapter 2 Demand Filed: 02.06.1997
IPC:
C23C 14/00 (2006.01) ,C30B 23/06 (2006.01) ,H05H 1/24 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23
Single-crystal growth by condensing evaporated or sublimed materials
02
Epitaxial-layer growth
06
Heating of the deposition chamber, the substrate, or the materials to be evaporated
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
Applicants:
CHORUS CORPORATION [US/US]; 1290 Hammond Road White Bear Lake, MN 55110, US
Inventors:
PRIDDY, Scott, W.; US
CHENG, Hwa; US
Agent:
SKINNER, Joel, D., Jr.; Suite 201 619 Second Street Hudson, WI 54016, US
Priority Data:
08/551,56001.11.1995US
Title (EN) UNIBODY GAS PLASMA SOURCE TECHNOLOGY
(FR) CONCEPTION UNITAIRE D'UNE SOURCE DE PLASMA GAZEUX
Abstract:
(EN) A unibody, monolithic, one-piece PBN plasma chamber for an MBE gas plasma source. The chamber has a cylindrical configuration with at least one effusion orifice and a gas inlet opening. The gas inlet opening is preferably communicatively connected to an elongated, tubular inlet member. The inlet member is preferably coupled to a liquid cooled gas source by an intermediary connection member which is preferably constructed of a refractory metal. The chamber minimizes leakage and maximizes efficiency. A gas plasma source assembly and a method for making the chamber are also disclosed.
(FR) Chambre monolithique d'une seule et même pièce à plasma de nitrure de bore pyrolitique pour source de plasma gazeux d'épitaxie par jets moléculaires. Cette chambre présente une configuration cylindrique et comporte au minimum un orifice d'effusion et une ouverture d'admission des gaz. L'ouverture d'admission des gaz est reliée de préférence à un élément d'admission tubulaire de forme allongée, avec lequel elle communique. Cet élément d'admission est raccordé de préférence à une source de gaz refroidie par liquide par l'intermédiaire d'un raccord réalisé de préférence en matériau réfractaire. Cette chambre réduit au minimum les fuites et offre une efficacité maximale. L'invention porte à la fois sur l'ensemble constituant la source de plasma gazeux et le procédé de réalisation de la chambre.
Designated States: AL, AM, AT, AU, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, ES, FI, GB, GE, HU, IL, IS, JP, KE, KG, KP, KR, KZ, LK, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, TJ, TR, TT, UA, UG, UZ, VN
African Regional Intellectual Property Organization (ARIPO) (KE, LS, MW, SD, SZ, UG)
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
AU1996074816