WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO1997008742) PROCEDURE FOR DRYING SILICON
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1997/008742    International Application No.:    PCT/EP1996/003541
Publication Date: 06.03.1997 International Filing Date: 09.08.1996
Chapter 2 Demand Filed:    21.03.1997    
IPC:
H01L 21/00 (2006.01)
Applicants: ICTOP ENTWICKLUNGS GMBH [DE/DE]; Gartenstrasse 19, D-95490 Mistelgau (DE) (For All Designated States Except US).
SCHELLENBERGER, Wilhelm [DE/DE]; (DE) (For US Only).
HERRMANNSDÖRFER, Dieter [DE/DE]; (DE) (For US Only)
Inventors: SCHELLENBERGER, Wilhelm; (DE).
HERRMANNSDÖRFER, Dieter; (DE)
Agent: MITSCHERLICH, SCHMIDT-EVERS, KÖRBER, MELZER, GRAF, SCHULZ; Sonnenstrasse 33, D-80331 München (DE)
Priority Data:
195 31 031.4 23.08.1995 DE
Title (EN) PROCEDURE FOR DRYING SILICON
(FR) PROCEDURE DE SECHAGE
Abstract: front page image
(EN)The invention relates to a procedure applicable for drying substrate surfaces of a large number of materials, such as semiconductors, metals, plastics and, in particular, silicon. The silicon (1) is dipped into a liquid bath (2) and the silicon (1) is separated from the liquid (3), the liquid of the bath (2) consisting of an aqueous HF solution (3) with a concentration between .001 and 50 %. By adding a gas mixture containing O¿2?/O¿3? immediately after the drying process is finished, the silicon surface is hydrophilized. By adding a gas mixture containing O¿2?/O¿3? during the drying process, cleaning takes place as the ozone enters the solution on the liquid surface.
(FR)Une procédure permet de sécher des surfaces de substrats, composées d'un grand nombre de matériaux, tels que semi-conducteurs, métaux, plastiques et, en particulier, silicium. Le silicium (1) est plongé dans un bain (2) puis séparé du liquide (3) de ce bain (2) qui se compose d'une solution aqueuse d'acide fluorhydrique (3) présentant une concentration située entre 0,001 et 50 %. En ajoutant un mélange gazeux contenant O¿2?/O¿3? juste après la fin du processus de séchage, on rend la surface de silicium hydrophile. En ajoutant un mélange gazeux contenant O¿2?/O¿3? pendant ce processus de séchage, on produit un nettoyage quand l'ozone pénètre dans la solution à la surface du liquide.
Designated States: AL, AM, AT, AU, AZ, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GE, HU, IL, IS, JP, KE, KG, KP, KR, KZ, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, TJ, TM, TR, TT, UA, UG, US, UZ, VN.
African Regional Intellectual Property Organization (KE, LS, MW, SD, SZ, UG)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)