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1. (WO1997007537) METHOD OF PRODUCING SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1997/007537    International Application No.:    PCT/JP1996/002335
Publication Date: 27.02.1997 International Filing Date: 21.08.1996
IPC:
C23C 16/40 (2006.01), H01L 21/316 (2006.01)
Applicants: ASM JAPAN K.K. [JP/JP]; 23-1, Nagayama 6-chome, Tama-shi, Tokyo 206 (JP) (For All Designated States Except US).
OKI ELECTRIC INDUSTRY CO., LTD. [JP/JP]; 7-12, Toranomon 1-chome, Minato-ku, Tokyo 105 (JP) (For All Designated States Except US).
KOIZUMI, Satoshi [JP/JP]; (JP) (For US Only).
YOSHIMARU, Masaki [JP/JP]; (JP) (For US Only).
MORI, Yukihiro [JP/JP]; (JP) (For US Only).
FUKUDA, Hideaki [JP/JP]; (JP) (For US Only)
Inventors: KOIZUMI, Satoshi; (JP).
YOSHIMARU, Masaki; (JP).
MORI, Yukihiro; (JP).
FUKUDA, Hideaki; (JP)
Agent: TAKEUCHI, Sumio; Daiwa Bank Toranomon Building, 6-21, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 105 (JP)
Priority Data:
7/212004 21.08.1995 JP
Title (EN) METHOD OF PRODUCING SEMICONDUCTOR DEVICE
(FR) PROCEDE DE FABRICATION D'UN DISPOSITIF A SEMI-CONDUCTEURS
Abstract: front page image
(EN)A method of obtaining a highly reliable semiconductor device by decreasing hygroscopic property of an insulating film of SiOF. In manufacturing a semiconductor device using a fluorine-containing silicon oxide film as an interlayer insultating film, fluorine-containing silicon oxide film is formed in an atmosphere containing an inert gas (14) in addition to source gases (11 to 13).
(FR)L'invention se rapporte à un procédé de fabrication d'un dispositif à semi-conducteurs extrêmement fiable consistant à diminuer les propriétés hygroscopiques d'un film isolant de SiOF. On fabrique un dispositif à semi-conducteurs au moyen d'un film d'oxyde de silicium renfermant du fluor et utilisé entre les couches. Ce film d'oxyde de silicium renfermant du fluor est produit à l'aide de sources gazeuses (11 à 13) dans une atmosphère contenant également un gaz inerte (14).
Designated States: KR, US.
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)