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1. WO1996041403 - MULTI-GIGAHERTZ FREQUENCY-MODULATED VERTICAL-CAVITY SURFACE EMITTING LASER

Publication Number WO/1996/041403
Publication Date 19.12.1996
International Application No. PCT/US1996/007752
International Filing Date 28.05.1996
Chapter 2 Demand Filed 07.01.1997
IPC
H01S 3/098 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
098Mode locking; Mode suppression
H01S 5/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
H01S 5/062 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
062by varying the potential of the electrodes
H01S 5/065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
065Mode locking; Mode suppression; Mode selection
H01S 5/183 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
18Surface-emitting lasers
183having a vertical cavity
H01S 5/42 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02-H01S5/30128
42Arrays of surface emitting lasers
CPC
H01S 5/0601
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
0601comprising an absorbing region
H01S 5/0614
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
0607by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
0614controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
H01S 5/06216
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
062by varying the potential of the electrodes
06209in single-section lasers
06216Pulse modulation or generation
H01S 5/0658
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
065Mode locking; Mode suppression; Mode selection ; ; Self pulsating
0658Self-pulsating
H01S 5/183
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
H01S 5/423
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
42Arrays of surface emitting lasers
423having a vertical cavity
Applicants
  • HONEYWELL INC. [US]/[US]
Inventors
  • MORGAN, Robert, A.
Agents
  • SHUDY, John, G.
Priority Data
08/476,96507.06.1995US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MULTI-GIGAHERTZ FREQUENCY-MODULATED VERTICAL-CAVITY SURFACE EMITTING LASER
(FR) LASER A EMISSION PAR LA SURFACE A CAVITE VERTICALE A FREQUENCE MODULEE EN MULTI-GIGAHERTZ
Abstract
(EN)
A GHz-range frequency-modulated laser based on manufacturable vertical cavity surface emitting lasers (VCSELs) and arrays. The present invention exploits a saturable absorber contained within the VCSELs distributed Bragg reflector which may itself be adjusted during fabrication or in operation. Under controllable operating conditions, the saturable absorber, strategically sized and placed, will force the VCSEL to self-pulsate (in the GHz-regime) at rates related to the local intensity, absorption, lifetime, and carrier density of the saturable absorber. These conditions can be controlled in real time in one of three ways; first, by adjusting the injection current into the VCSEL itself; second, for a fixed VCSEL bias and the use of a third terminal, by modifying the carrier density within the saturable absorber via additional current injection; or third, the saturable absorber can be reverse-biased by simultaneously altering its absorption and carrier lifetime and thus carrier density. Additionally, the frequency response can be controlled in the fabrication process by affecting the location of the saturable absorber, the mirror design and cavity Q, and the laser size (and hence threshold current). One can easily multiplex numerous GHz channels into a 100 plus GHz transmitter in a cost-effective manner. Application of the saturable absorber for self-pulsation provides for a decoherence of the VCSEL light output to eliminate modal noise in data communication systems, or for use as a local oscillator in an RF or other system. A plurality of VCSELs may be formed into an array having various frequencies, intensities, phases or other properties. The VCSELs may form a phased array, for instance.
(FR)
Laser à fréquence modulée dans la plage des gigahertz à base de lasers à émission par la surface à cavité verticale (VCSEL) et de réseaux manufacturables. La présente invention exploite un absorbeur saturable contenu à l'intérieur du réflecteur de Bragg réparti du VCSEL qui peut lui-même être réglé en cours de fabrication ou de fonctionnement. Dans des conditions de fonctionnement pouvant être commandées, l'absorbeur saturable, dimensionné et placé de manière stratégique, force le VCSEL à fonctionner par autoimpulsion (dans le régime des gigahertz) à des fréquences liées à l'intensité locale, à l'absorption, à la durée de vie et à la concentration de porteurs de l'absorbeur saturable. Ces conditions peuvent être commandées en temps réel d'une de trois manières: premièrement, en réglant le courant d'injection dans le VCSEL même; deuxièmement, pour une polarisation invariable du VCSEL et l'utilisation d'une troisième borne, en modifiant la concentration de porteurs à l'intérieur de l'absorbeur saturable par une injection de courant supplémentaire; et troisièmement, l'absorbeur saturable peut être alimenté dans le sens bloqué en modifiant simultanément son absorption et la durée de vie de ses porteurs, et donc la concentration de porteurs. En outre, la réponse en fréquence peut être commandée pendant le processus de fabrication en affectant la situation de l'absorbeur saturable, la configuration du miroir et la cavité Q, ainsi que la taille du laser (et donc le courant de seuil). On peut facilement multiplexer de nombreux canaux gigahertz en un émetteur de 100 GHz et plus de manière propre à réduire les coûts. L'application de l'absorbeur saturable pour l'autoimpulsion permet de décohérer l'émission lumineuse du VCSEL pour éliminer le bruit modal dans des systèmes de transmission de données, ou pour servir d'oscillateur local dans un système de fréquence radioélectrique ou autre. Il est possible de constituer un réseau pourvu de diverses fréquences, intensités, phases ou autres propriétés à partir d'une pluralité de VCSEL. Les VCSEL peuvent former une antenne réseau à commande de phase, par exemple.
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