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1. WO1996041369 - METHOD AND APPARATUS FOR CONTROLLING A TEMPERATURE OF A WAFER

Publication Number WO/1996/041369
Publication Date 19.12.1996
International Application No. PCT/US1996/009978
International Filing Date 07.06.1996
Chapter 2 Demand Filed 18.12.1996
IPC
H01L 21/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
CPC
H01L 21/67109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67109mainly by convection
Applicants
  • LAM RESEARCH CORPORATION [US]/[US]
Inventors
  • HUSAIN, Anwar
  • NOORBAKHSH, Hamid
Agents
  • PETERSON, James, W.
Priority Data
08/474,00907.06.1995US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD AND APPARATUS FOR CONTROLLING A TEMPERATURE OF A WAFER
(FR) PROCEDE ET APPAREIL DE REGULATION DE LA TEMPERATURE D'UNE TRANCHE
Abstract
(EN)
A method and apparatus for controlling a temperature of a wafer during processing such as in a gas plasma or nonplasma environment wherein a wafer is positioned on a chuck. The wafer is heated and a pressurized gas is introduced into a space between the wafer and the chuck such that the pressurized gas transfers heat from the wafer to the chuck. Pressure of the pressurized gas is automatically varied such that heat transfer between the wafer and the chuck is varied in response to a difference between an actual wafer temperature and a desired wafer temperature to maintain the desired wafer temperature.
(FR)
Procédé et appareil de régulation de la température d'une tranche en cours de traitement, par exemple en environnement plasma ou non-plasma, lorsque la tranche est placée sur un mandrin. La tranche est chauffée et un gaz pressurisé est introduit dans un espace compris entre la tranche et le mandrin, de façon que le gaz pressurisé transfère de la chaleur provenant de la tranche sur le mandrin. La pression du gaz pressurisé est modulée automatiquement de telle sorte que le transfert de chaleur entre la tranche et le mandrin varie en fonction de la différence entre la température réelle de la tranche et une température souhaitée de la tranche, en maintenant la température de tranche désirée.
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