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1. WO1996041364 - BEAM STOP APPARATUS FOR AN ION IMPLANTER

Publication Number WO/1996/041364
Publication Date 19.12.1996
International Application No. PCT/GB1995/001309
International Filing Date 07.06.1995
Chapter 2 Demand Filed 13.12.1996
IPC
H01J 37/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
H01J 37/317 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
CPC
H01J 2237/31705
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
30Electron or ion beam tubes for processing objects
317Processing objects on a microscale
31701Ion implantation
31705Impurity or contaminant control
H01J 37/3002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
3002Details
H01J 37/3171
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
3171for ion implantation
Applicants
  • APPLIED MATERIALS, INC. [US]/[US] (AllExceptUS)
  • BURGIN, David, R. [GB]/[GB] (UsOnly)
  • ENGLAND, Jonathan, G. [GB]/[GB] (UsOnly)
  • WAUK, Michael, T. [US]/[GB] (UsOnly)
  • TODAKA, Ryoji [JP]/[JP] (UsOnly)
Inventors
  • BURGIN, David, R.
  • ENGLAND, Jonathan, G.
  • WAUK, Michael, T.
  • TODAKA, Ryoji
Agents
  • BOULT WADE TENNANT
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) BEAM STOP APPARATUS FOR AN ION IMPLANTER
(FR) DISPOSITIF D'ARRET DE FAISCEAU POUR IMPLANTEUR IONIQUE
Abstract
(EN)
An ion beam absorbing apparatus for an ion implanter comprises an ion absorber for absorbing ions in an ion beam generated by the ion implanter, and support means for supporting the ion absorber and adapted for connection with the ion implanter, so that when so connected, the ion absorber can intercept the ion beam and absorb ions not intercepted by a target to be implanted with beam ions. The support means is further adapted for supporting the ion absorber in a plurality of different positions which can be selected so that respective different parts of the ion absorber intercept the ion beam.
(FR)
Ce dispositif d'absorption de faisceau ionique pour implanteur ionique, comprend un absorbeur d'ions qui absorbe les ions d'un faisceau ionique produit par l'implanteur d'ions, ainsi qu'un support destiné à l'absorbeur d'ions et prévu pour se raccorder à ce dernier de façon qu'une fois ce raccordement effectué, l'absorbeur d'ions puisse intercepter le faisceau ionique et absorber les ions non absorbés par une cible devant subir une implantation ionique. Ce support est en outre conçu pour supporter l'absorbeur d'ions en plusieurs points différents que l'on peut sélectionner de façon que différentes parties de l'absorbeur d'ions interceptent ce faisceau ionique.
Also published as
Latest bibliographic data on file with the International Bureau