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1. WO1996039632 - PACKAGE FOR SEALING AN INTEGRATED CIRCUIT DIE

Publication Number WO/1996/039632
Publication Date 12.12.1996
International Application No. PCT/US1996/008708
International Filing Date 05.06.1996
Chapter 2 Demand Filed 03.01.1997
IPC
G01P 1/02 2006.01
GPHYSICS
01MEASURING; TESTING
PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION OR SHOCK; INDICATING PRESENCE OR ABSENCE OF MOVEMENT;  INDICATING DIRECTION OF MOVEMENT 
1Details of instruments
02Housings
CPC
G01P 1/023
GPHYSICS
01MEASURING; TESTING
PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
1Details of instruments
02Housings
023for acceleration measuring devices
H01L 2224/32245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32245the item being metallic
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48247
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
48221the body and the item being stacked
48245the item being metallic
48247connecting the wire to a bond pad of the item
H01L 2224/48465
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
48463the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
48465the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
H01L 2224/73265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
732Location after the connecting process
73251on different surfaces
73265Layer and wire connectors
Applicants
  • ANALOG DEVICES, INC. [US]/[US]
Inventors
  • MARTIN, John, R.
  • ROBERTS, Carl, M., Jr.
Agents
  • KENNARD, Wayne, M.
Priority Data
08/471,74806.06.1995US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PACKAGE FOR SEALING AN INTEGRATED CIRCUIT DIE
(FR) ENCAPSULAGE D'UN DE DE CIRCUIT INTEGRE
Abstract
(EN)
A die (10, 70) has a part that is sealed with a cap (30, 50, 80). The seal (32, 52, 84) can be hermetic or non-hermetic. If hermetic, a layer (74) of glass or metal is formed in the surface of the die (10, 70), and the cap (80) has a layer (84) of glass or metal at a peripheral area so that, when heated, the layers (74, 84) form a hermetic seal. A non-hermetic seal can be formed by bonding a cap (30, 50) with a patterned adhesive (32, 52). The cap (30, 50, 80), which can be silicon or can be a metal paddle, is electrically coupled to a fixed voltage to shield the part of the die (10, 70).
(FR)
Un dé (10, 70) comporte une partie close par un chapeau (30, 50, 80). Le scellement (32, 52, 84) peut être hermétique ou non. Dans le premier cas, la surface du dé (10, 70) est revêtue d'une couche de verre ou de métal et le chapeau (80) comporte à sa périphérie une couche (84) de verre ou de métal, lesdites couches (74, 84) formant après chauffage un scellement hermétique. Dans le deuxième cas, la liaison est obtenue par collage du chapeau (30, 50) à l'aide d'un adhésif (32, 52) à motifs. Le chapeau (30, 50, 80) qui peut être en silicium ou en forme d'ailette de métal est raccordé électriquement à un potentiel fixe pour assurer le blindage d'une partie du dé (10, 70).
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