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1. WO1996033537 - METHOD OF MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE, IN PARTICULAR A SEMICONDUCTOR DIODE LASER

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[ EN ]

Claims:

1. A method of manufacturing an optoelectronic semiconductor device with a semiconductor body (10) which comprises a semiconductor substrate (11), which method serves to provide on a first semiconductor region (1) of a first semiconductor material forming pan of the semiconductor body (10) a second semiconductor region (2) of a second semiconductor material different from the first, a third semiconductor region (3) of a third semiconductor material different from the first being provided adjacent the first
semiconductor region (1) by means of a growing process, characterized in that two depressions (30) are formed in the semiconductor body, which depressions extend from the surface of the semiconductor body (10) at least down to the first semiconductor region (1), a portion of the first, layer-shaped semiconductor region (1) situated between the depressions

(30) is removed, starting from the depressions (30), by means of etching with an etchant which is selective relative to the second semiconductor material, whereby an interconnection

(31) is formed between the depressions (30) within the semiconductor body (10), and said interconnection (31) is filled up with the third semiconductor material by means of the growing process from the two depressions (30), whereby the third semiconductor (3) region is formed.
2. A method as claimed in Claim 1, characterized in that the second semiconductor region (2) is formed as a confinement region, and the two depressions (30) are provided on either side of a strip-shaped active or radiation-guiding region to be formed in the first semiconductor region (1) and at the area of a radiation output surface (20) to be formed.
3. A method as claimed in Claim 1 or 2, characterized in that a strip-shaped mesa (12) is formed in the surface of the semiconductor body (10) by etching and with the aid of a mask (13), which mesa comprises at least the second semiconductor region (2), and a masking layer (14) is provided over and on either side of the strip-shaped mesa (12) and is provided with at least one strip-shaped opening (15) which crosses the strip-shaped mesa (12) substantially perpendicularly and within which the depressions (30) are defined on either side of the mesa (12).
4. A method as claimed in Claim 3, wherein the optoelectronic semiconductor device is constructed as a semiconductor diode laser, characterized in that the following are provided in that order on a semiconductor substrate (11) of a first conductivity type: a first cladding layer (4) of the first conductivity type, an active layer (1) forming the first semiconductor region (1), and a second cladding layer (2) of a second conductivity type opposed to die first and forming the second semiconductor region (2), whereupon the strip- shaped mesa (12) is formed, preferably reaching down into the substrate, and the masking layer (14) with the opening (15) is provided, after which the interconnection (31) is formed, the mask (13) and the masking layer (14) are removed and a third, preferably current- blocking cladding layer (5) is grown on either side of the mesa (12), whereby simultaneously the third semiconductor region (3) is formed, and the second cladding layer (2) and the substrate (11) are provided a first and a second conductive layer (7, 8), respectively, and the semiconductor body (10) is cleaved at the area of the third semiconductor region (3) so as to form a mirror surface (20).
5. A method as claimed in claim 4, characterized in mat the active layer (1) is constructed as a (multi)quantum well layer (1), while between the active layer (1) and the first or second cladding layer (4, 2) a comparatively thick separate confinement layer or radiation-guiding layer is provided of which also a portion situated between the depressions (30) is selectively removed during the formation of the interconnection (5), whether or not in a separate etching step, which portion is also replaced with the semiconductor material of the third cladding layer (5).
6. A method as claimed in Claim 4 or 5, characterized in that n-Inp is used as the semiconductor material for the semiconductor substrate (11) and the first cladding layer (4), p-InP for the second cladding layer (2), semi-insulating InP for the third cladding layer (5), InGaAs or InGaAsP for the active layer (1) and a separate confinement layer or radiation-guiding layer, if present, and p-InGaAs or p-InGaAsP for a contact layer (6) situated between d e second cladding layer (2) and the first conductive layer (7).
7. A method as claimed in any one of the preceding Claims, characterized in that the length, widdi, and thickness of the interconnection (31) are chosen such that they lie between 1 and 10 μ , between 10 and 40 μm, and between 0.1 and 1 μm, respectively. 8. A method as claimed in any one of me preceding Claims, characterized in that organometallic gas phase epitaxy is chosen as the growing technique for the
semiconductor layers (1 , 2, 3, 4, 5, 6).