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1. WO1996033537 - METHOD OF MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE, IN PARTICULAR A SEMICONDUCTOR DIODE LASER

Publication Number WO/1996/033537
Publication Date 24.10.1996
International Application No. PCT/IB1996/000238
International Filing Date 18.03.1996
IPC
H01S 5/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
16Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
H01S 5/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave
H01S 5/227 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave
22having a ridge or a stripe structure
227Buried mesa structure
H01S 5/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
50Amplifier structures not provided for in groups H01S5/02-H01S5/30100
CPC
H01S 2304/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2304Special growth methods for semiconductor lasers
04MOCVD or MOVPE
H01S 5/164
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
16Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
164with window regions comprising semiconductor material with a wider bandgap than the active layer
H01S 5/2081
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
2054Methods of obtaining the confinement
2081using special etching techniques
H01S 5/2275
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
22having a ridge or stripe structure
227Buried mesa structure ; ; Striped active layer
2275mesa created by etching
H01S 5/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
50Amplifier structures not provided for in groups H01S5/02 - H01S5/30
Applicants
  • PHILIPS ELECTRONICS N.V. [NL]/[NL]
  • PHILIPS NORDEN AB [SE]/[SE] (SE)
Inventors
  • VAN ROIJEN, Raymond
  • THIJS, Petrus, Johannes, Adrianus
  • VAN GESTEL, Patrick, Henricus
Agents
  • SMEETS, Eugenius, T., J., M.
Priority Data
95200986.819.04.1995NL
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE, IN PARTICULAR A SEMICONDUCTOR DIODE LASER
(FR) PROCEDE DE FABRICATION D'UN DISPOSITIF ELECTRONIQUE A SEMI-CONDUCTEURS, EN PARTICULIER, UN LASER A SEMI-CONDUCTEURS
Abstract
(EN)
A passive region (3) is provided adjacent the mirror surface (20) of a laser by the known method. A mesa (12) is formed in that case with an end face parallel to the mirror surface to be formed. The passive region (3) is grown against the end face, and the mirror surface (20) is formed therein by cleaving. A disadvantage of the known method is that the resulting lasers often show an irregular pattern of the emitted or amplified radiation, a high starting current, and a short useful life. In a method according to the invention, the passive region is provided exclusively at the area of the active region (1). The influence of nucleation problems is small then, and irregularities in the radiation path are avoided. As a result, the pattern of the radiation is regular, and the laser has a low starting current and a long useful life. The passive region (3) is provided at the area of the active region (1) only in the following manner: two depressions (30) are formed in the layer structure of the laser at the area of the mirror surface to be formed, reaching down to the active layer (1). Then a portion of the active layer (1) situtated between the depressions (30) is selectively removed, whereupon the passive region (3) is grown starting from the depressions (30) in the tubular cavity (31) thus formed. The method is suitable for the manufacture of both gain and index guided lasers with a passive mirror region. However, the method is also highly suitable for the manufacture of other optoelectronic devices such as two radiation waveguides situated one above the other and locally interconnected by the third semiconductor region (3), which in that case is radiation-guiding.
(FR)
D'après le procédé connu, une région passive (3) se trouve en position contiguë à la surface (20) du miroir d'un laser. Dans ce cas, on crée une mésa (12), dont une face d'extrémité est parallèle à la surface de miroir à constituer. On effectue la croissance de la région passive (3) contre la face d'extrémité et on obtient la surface (20) de miroir par clivage. Ce procédé de l'état actuel de la technique présente un désavantage résidant dans le fait que les laser obtenus possèdent souvent une configuration irrégulière de rayonnement émis ou amplifié, un courant de déclenchement élevé et une durée de vie limitée. Dans le procédé décrit par l'invention, la région passive se trouve exclusivement au niveau de la zone de la région active (1). L'influence des problèmes de nucléation se trouve donc réduite et on évite les irrégularités du trajet de rayonnement. De ce fait, la configuration de rayonnement est régulière et le laser possède un courant de déclenchement faible et une durée de vie longue. On crée la région passive (3) au niveau de la zone de la région active (1) uniquement de la façon suivante: on forme deux creux (30) dans la structure des couches du laser au niveau de la zone de la surface de miroir à obtenir, ce qui permet de descendre jusqu'à la couche active (1). Puis on supprime sélectivement une partie de la couche active (1) située entre les creux (30) et on effectue la croissance de la région passive (3) à partir des creux (30) dans la cavité tubulaire (31) ainsi obtenue. Ce procédé est approprié pour fabriquer des lasers guidés respectivement par gain et par index et possédant une région miroir passive. Cependant, ce procédé permet également de fabriquer avantageusement d'autres dispositifs optoélectroniques, tels que deux guides d'ondes à rayonnement situés l'un au-dessus de l'autre et reliés localement entre eux par la troisième région à semi-conducteurs, qui, dans ce cas, constitue un guide de rayonnement.
Also published as
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