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1. WO1996033301 - METHOD AND EQUIPMENT FOR GROWING SINGLE CRYSTALS

Publication Number WO/1996/033301
Publication Date 24.10.1996
International Application No. PCT/JP1996/001089
International Filing Date 22.04.1996
Chapter 2 Demand Filed 21.11.1996
IPC
C30B 15/22 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
C30B 15/30 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
30Mechanisms for rotating or moving either the melt or the crystal
CPC
C30B 15/22
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
C30B 15/30
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
30Mechanisms for rotating or moving either the melt or the crystal
Y10S 117/90
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
117Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
90Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
Y10S 117/911
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
117Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
911Seed or rod holders
Y10T 117/1032
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
117Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
10Apparatus
1024for crystallization from liquid or supercritical state
1032Seed pulling
Applicants
  • SHIN-ETSU HANDOTAI CO., LTD. [JP]/[JP] (AllExceptUS)
  • IINO, Eiichi [JP]/[JP] (UsOnly)
  • NAKAMURA, Yasushi [JP]/[JP] (UsOnly)
  • OTSUKA, Seiichiro [JP]/[JP] (UsOnly)
  • MIDZUISHI, Koji [JP]/[JP] (UsOnly)
  • KIMURA, Masanori [JP]/[JP] (UsOnly)
  • YAMAGISHI, Hirotoshi [JP]/[JP] (UsOnly)
Inventors
  • IINO, Eiichi
  • NAKAMURA, Yasushi
  • OTSUKA, Seiichiro
  • MIDZUISHI, Koji
  • KIMURA, Masanori
  • YAMAGISHI, Hirotoshi
Agents
  • TATENO, Koichi
Priority Data
7/12068021.04.1995JP
7/25689209.09.1995JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD AND EQUIPMENT FOR GROWING SINGLE CRYSTALS
(FR) PROCEDE ET INSTALLATION DESTINES A LA CRISTALLOGENESE DE MONOCRISTAUX
Abstract
(EN)
A method and equipment for growing single crystals according to the so-called Czochralski process. The method comprises attaching a seed crystal (12) to the tip of a wire (41a) of a lifting device (41), pulling up a single crystal portion (15) for crystal growth while engaging an arm-shaped member (44a) of a supporting device (44) with a recess (16) of unevennesses (14) formed on the side of the single crystal portion (15), synchronizing the pulling rate of the member (44a) with that of the wire (41a) to smoothen the cooperation of the both, and pulling up the single crystal portion (15) at a constant pulling rate. Heavy single crystals can safely be pulled up without causing dislocation while minimizing the shock to the growing crystals.
(FR)
Cette invention concerne un procédé et une installation destinés à la cristallogenèse de monocristaux selon le processus dit de Czochralsky. Ce procédé consiste à attacher un germe (12) à l'extrémité du fil (41a) d'un dispositif de levage (41), à lever un morceau (15) de monocristal destiné à la cristallogenèse tout en faisant pénétrer un élément en forme de bras (44a) d'un dispositif de support (44) dans un évidement comportant des anfractuosités formé sur le côté du morceau (15) de monocristal. Le rythme de levage de l'élément (44a) est synchronisé à celui du fil (41a) de manière à assouplir leur interaction, le morceau (15) de monocristal étant ensuite levé à un rythme de levage constant. On peut ainsi lever des monocristaux lourds en toute sécurité et sans engendrer de dislocation, tout en minimisant les chocs reçus par cristaux en cours de croissance.
Also published as
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