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1. WO1996030952 - INDIRECT BANDGAP SEMICONDUCTOR OPTOELECTRONIC DEVICE

Publication Number WO/1996/030952
Publication Date 03.10.1996
International Application No. PCT/EP1996/001357
International Filing Date 28.03.1996
Chapter 2 Demand Filed 28.10.1996
IPC
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 33/0008
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0004Devices characterised by their operation
0008having p-n or hi-lo junctions
H01L 33/0033
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0004Devices characterised by their operation
0033having Schottky barriers
H01L 33/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
34containing only elements of group IV of the periodic system
Applicants
  • OCTROOIBUREAU KISCH N.V. [NL]/[NL] (AllExceptUS)
  • UNIVERSITY OF PRETORIA [ZA]/[ZA] (AllExceptUS)
  • SNYMAN, Lukas, Willem [ZA]/[ZA] (UsOnly)
  • AHARONI, Herzl [IL]/[IL] (UsOnly)
  • DU PLESSIS, Monuko [ZA]/[ZA] (UsOnly)
Inventors
  • SNYMAN, Lukas, Willem
  • AHARONI, Herzl
  • DU PLESSIS, Monuko
Agents
  • ABBIE, A., K.
Priority Data
95/255229.03.1995ZA
96/174104.03.1996ZA
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) INDIRECT BANDGAP SEMICONDUCTOR OPTOELECTRONIC DEVICE
(FR) DISPOSITIF OPTOELECTRONIQUE SEMI-CONDUCTEUR A BANDE INTERDITE INDIRECTE
Abstract
(EN)
An optoelectronic device (10) formed in a chip of an indirect bandgap semiconductor material such as silicon is disclosed and claimed. The device comprises a visibly exposed highly doped n+ region (16) embedded at the surface of an oppositely doped epitaxial layer (14), to form a first junction region (15) close to the surface of the epitaxial layer. When the junction region is reverse biased to beyond avalanche breakdown, the device acts as a light emitting device to the external environment. When it is reverse biased to just below avalanche breakdown it acts as a light detector. The device may further include a further junction region for generating or providing additional carriers in the first junction region, thereby to improve the performance of the device. This further junction can be multiplied to facilitate multi-input signal processing functions where the light emission from the first junction is a function of the electrical signals applied to the further junctions.
(FR)
L'invention concerne un dispositif optoélectronique (10) formé sur une pastille en matériau semi-conducteur à bande interdite indirecte, par exemple en silicium. Le dispositif comprend une zone bien visible hautement dopée n+ (16) encastrée à la surface d'une couche (14) épitaxiale dopée par des charges opposées, pour former une première zone de jonction (15) près de la surface de la couche épitaxiale. Quand la zone de la jonction est polarisée en sens inverse au-delà du claquage par avalanche, le dispositif agit comme un dispositif émetteur de lumière dans l'environnement externe. Quand la polarisation s'inverse juste en dessous du claquage par avalanche, le dispositif agit comme un détecteur de lumière. Le dispositif peut comporter en outre une autre zone de jonction pour générer ou fournir les porteurs de charge additionnels dans la première zone de jonction, ce qui permet d'améliorer les performances du dispositif. Cette autre jonction peut être multipliée pour faciliter des fonctions de traitement de signaux d'entrée multiples, l'émission de la lumière de la première jonction étant fonction des signaux électriques appliqués aux autres jonctions.
Also published as
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