Processing

Please wait...

Settings

Settings

Goto Application

1. WO1996029704 - EEPROM ARRAY WITH FLASH-LIKE CORE

Publication Number WO/1996/029704
Publication Date 26.09.1996
International Application No. PCT/US1996/002482
International Filing Date 22.02.1996
IPC
G06F 11/10 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
11Error detection; Error correction; Monitoring
07Responding to the occurrence of a fault, e.g. fault tolerance
08Error detection or correction by redundancy in data representation, e.g. by using checking codes
10Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
G06F 12/08 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
12Accessing, addressing or allocating within memory systems or architectures
02Addressing or allocation; Relocation
08in hierarchically structured memory systems, e.g. virtual memory systems
G11C 16/10 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
10Programming or data input circuits
G11C 16/16 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
10Programming or data input circuits
14Circuits for erasing electrically, e.g. erase voltage switching circuits
16for erasing blocks, e.g. arrays, words, groups
G11C 16/26 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
26Sensing or reading circuits; Data output circuits
CPC
G06F 11/1008
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
11Error detection; Error correction; Monitoring
07Responding to the occurrence of a fault, e.g. fault tolerance
08Error detection or correction by redundancy in data representation, e.g. by using checking codes
10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
1008in individual solid state devices
G06F 11/1068
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
11Error detection; Error correction; Monitoring
07Responding to the occurrence of a fault, e.g. fault tolerance
08Error detection or correction by redundancy in data representation, e.g. by using checking codes
10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
1008in individual solid state devices
1068in sector programmable memories, e.g. flash disk
G06F 12/0893
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
12Accessing, addressing or allocating within memory systems or architectures
02Addressing or allocation; Relocation
08in hierarchically structured memory systems, e.g. virtual memory systems
0802Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
0893Caches characterised by their organisation or structure
G06F 2212/2022
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
2212Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
20Employing a main memory using a specific memory technology
202Non-volatile memory
2022Flash memory
G11C 16/10
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
10Programming or data input circuits
G11C 16/16
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
10Programming or data input circuits
14Circuits for erasing electrically, e.g. erase voltage switching circuits
16for erasing blocks, e.g. arrays, words, groups
Applicants
  • ATMEL CORPORATION [US]/[US]
Inventors
  • LAMBRACHE, Emil
  • SMARANDOIU, George
Agents
  • SCHNECK, Thomas
Priority Data
405,88417.03.1995US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) EEPROM ARRAY WITH FLASH-LIKE CORE
(FR) AGENCEMENT DE MEMOIRES EEPROM AVEC UN NOYAU DE TYPE 'FLASH'
Abstract
(EN)
A sector programmable EEPROM memory capable of emulating the byte programmable functionality of full-featured byte programmable EEPROMs. The EEPROM memory incorporates an on-chip write cache (83) used as a buffer between byte level data entered by the user system and word level data written to the main memory core. The EEPROM main memory core is divided into memory pages (32) with each memory page further divided into sub-page sectors (59-62), and each sub-page sector holding a multitude of multi-byte data words. The sub-page sectors within a memory page can be individually or collectively subjected to a program and erase cycle. The EEPROM memory incorporates an EEC unit (73) used to recover and refresh lost data in the memory core. The EEPROM memory is also capable of interruptible load cycles.
(FR)
L'invention concerne une mémoire EEPROM programmable par secteurs, capable d'émuler la programmation par octets des mémoires connues comportant toutes les caractéristiques nécessaires à la programmation par octets. La mémoire EEPROM comprend une antémémoire (83) d'écriture sur puce comme mémoire tampon entre les données entrées sous forme d'octets par le système utilisateur et les données sous forme de mots écrites dans la mémoire centrale principale. La mémoire centrale principale de l'EEPROM est divisé en pages de mémoire (32), avec chaque page de mémoire divisée en outre en secteurs de sous-page (59-62) et chaque secteur de sous-page contenant une multitude de mots de données à octets multiples. Les secteurs de sous-pages dans une page de la mémoire peuvent être soumis individuellement ou collectivement à un cycle de programmation et d'effacement. La mémoire EEPROM comprend une unité à code correcteur d'erreurs (73) utilisée pour extraire et réactualiser les données perdues dans le noyau de la mémoire. La mémoire EEPROM est également capable d'effectuer des cycles de chargement qui peuvent être interrompus.
Latest bibliographic data on file with the International Bureau