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1. WO1996021247 - METHOD FOR FABRICATING DEVICES FOR ELECTROSTATIC DISCHARGE PROTECTION AND VOLTAGE REFERENCES, AND THE RESULTING STRUCTURES

Publication Number WO/1996/021247
Publication Date 11.07.1996
International Application No. PCT/US1995/016947
International Filing Date 21.12.1995
Chapter 2 Demand Filed 07.06.1996
IPC
H01L 27/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
CPC
H01L 27/0255
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0248for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
0251for MOS devices
0255using diodes as protective elements
H01L 27/0259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0248for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
0251for MOS devices
0259using bipolar transistors as protective elements
H01L 27/0727
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
07the components having an active region in common
0705comprising components of the field effect type
0727in combination with diodes, or capacitors or resistors
Applicants
  • SHIOTA, Philip [US]/[US]
Inventors
  • SHIOTA, Philip
Agents
  • CASERZA, Steven, F.
Priority Data
08/366,04829.12.1994US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR FABRICATING DEVICES FOR ELECTROSTATIC DISCHARGE PROTECTION AND VOLTAGE REFERENCES, AND THE RESULTING STRUCTURES
(FR) PROCEDE DE FABRICATION DE DISPOSITIFS DE PROTECTION CONTRE LES DECHARGES ELECTROSTATIQUES ET DE TENSIONS DE REFERENCE ET STRUCTURES OBTENUES
Abstract
(EN) A novel process is taught for forming diodes in a process which simultaneously forms MOS or CMOS devices. These diodes have relatively low breakdown voltage, making them suitable for ESD protection devices or as voltage reference diodes. In alternative embodiments, novel low breakdown voltage devices are fabricated in a similar fashion as MOS devices but with doping levels such that the inherent bipolar device has a low breakdown voltage characteristic. In alternative embodiments, novel vertical bipolar transistors are taught, as are SCR devices, having low breakdown voltage characteristics. In one embodiment of this invention, a low breakdown voltage device is integrated directly with a standard MOS transistor, allowing the low breakdown voltage device to trigger the turn on of the standard MOS device, thereby providing large current capacity controlled by the low breakdown voltage device.
(FR) L'invention concerne un nouveau procédé de fabrication de diodes, qui permet d'obtenir simultanément des dispositifs MOS et CMOS. Ces diodes possèdent une tension de claquage relativement basse, ce qui rend leur utilisation appropriée pour des dispositifs de protection contre les décharges électrostatiques ou en tant que diodes de tension de référence. Dans d'autres modes de réalisation, de nouveaux dispositifs possédant une tension de claquage peu élevée sont fabriqués de la même façon que des dispositifs MOS mais sans niveaux de dopage, de sorte que le dispositif bipolaire inhérent possède une caractéristique de tension de claquage basse. D'autres modes de réalisation concernent de nouveaux transistors bipolaires verticaux qui, de même que les dispositifs SCR, possèdent des caractéristiques de tension de claquage basse. Dans un mode de réalisation de l'invention, un dispositif à tension de claquage basse est intégré directement à un transistor MOS standard, ce qui permet audit dispositif de déclencher la mise en fonction du transistor MOS standard et, de ce fait, de produire une capacité importante de courant régulée par le dispositif à tension de claquage basse.
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