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1. WO1996012346 - A PROTECTED SWITCH

Publication Number WO/1996/012346
Publication Date 25.04.1996
International Application No. PCT/IB1995/000742
International Filing Date 08.09.1995
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H03K 17/082 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and -breaking
08Modifications for protecting switching circuit against overcurrent or overvoltage
082by feedback from the output to the control circuit
CPC
H01L 29/41766
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
417carrying the current to be rectified, amplified or switched
41725Source or drain electrodes for field effect devices
41766with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
H01L 29/7803
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
7803structurally associated with at least one other device
H01L 29/7804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
7803structurally associated with at least one other device
7804the other device being a pn-junction diode
H01L 29/7808
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
7803structurally associated with at least one other device
7808the other device being a breakdown diode, e.g. Zener diode
H01L 29/7815
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
7815with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
H03K 17/0822
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
08Modifications for protecting switching circuit against overcurrent or overvoltage
082by feedback from the output to the control circuit
0822in field-effect transistor switches
Applicants
  • PHILIPS ELECTRONICS N.V. [NL]/[NL]
  • PHILIPS NORDEN AB [SE]/[SE] (SE)
Inventors
  • KELLY, Brendan, Patrick
  • LOWIS, Royce
Agents
  • STEVENS, Brian, T.
Priority Data
9420572.112.10.1994GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A PROTECTED SWITCH
(FR) COMMUTATEUR PROTEGE
Abstract
(EN)
A protected switch has a power semiconductor device (P) having first and second main electrodes (D and S) for coupling a load (L) between first (2) and second (3) voltage supply lines, a control electrode (G) coupled to a control voltage supply line (4) and a sense electrode (S1) for providing in operation of the power semiconductor device a sense current that flows between the first (d) and sense electrodes (S1) and is indicative of the current that flows between the first (D) and second (S) main electrodes. A control arrangement (S) has a sense resistance (R4) coupled to the sense electrode (S1) and across which a sense voltage is developed by the sense current (I3). A control semiconductor device (M3) has its main electrodes coupled between the control electrode (G) and the second (S) main electrode of the power semiconductor device (P). A semiconductor device (M2) has one (d) of its main electrodes coupled to the control electrode (g) of the control semiconductor device (M3) and the other (s) to the sense resistance (R4). A reference arrangement (50) provides a biasing voltage (Vb) for the control electrode (g) of the semiconductor device (M2) to cause the semiconductor device (M2) to conduct sufficiently to cause the control semiconductor device (M3) to be non-conducting until the sense voltage reaches a reference voltage determined by the biasing voltage when the semiconductor device (M2) becomes less conducting, causing the control semiconductor device (M3) to start to conduct, so reducing the voltage at the control electrode (G) of the power semiconductor device (P) and thus reducing the current through the power semiconductor device (P).
(FR)
Un commutateur protégé comprend un dispositif semi-conducteur de puissance (P) avec des première et deuxième électrodes principales (D et S) pour coupler une charge (L) entre des première (2) et deuxième (3) lignes d'alimentation en tension, une électrode de commande (G) couplée à une ligne de commande (4) d'alimentation en tension et une électrode de détection (S1) qui fournit pendant le fonctionnement du dispositif semi-conducteur de puissance un courant de détection entre la première électrode (d) et l'électrode de détection (S1), ce courant étant représentatif du courant entre les première (D) et deuxième (S) électrodes principales. Une unité de commande (S) comprend une résistance de détection (R4) couplée à l'électrode de détection (S1) à travers laquelle une tension de détection est développée par le courant de détection (I3). Un dispositif semi-conducteur de commande (M3) comprend des électrodes principales couplées entre l'électrode de commande (G) et la deuxième électrode principale (S) du dispositif semi-conducteur de puissance (P). Un dispositif semi-conducteur (M2) a une électrode principale (d) couplée à l'électrode de commande (g) du dispositif semi-conducteur de commande (M3) et une autre électrode (s) couplée à la résistance de détection (R4). Un agencement de référence (50) fournit une tension de polarisation (Vb) à l'électrode de commande (g) du dispositif semi-conducteur (M2) afin de rendre le dispositif semi-conducteur (M2) suffisamment conducteur pour que le dispositif semi-conducteur de commande (M3) devienne non conducteur jusqu'à ce que la tension de détection atteigne une tension de référence déterminée par la tension de polarisation. Le dispositif semi-conducteur (M2) devient alors moins conducteur et rend conducteur le dispositif semi-conducteur de commande (M3), de manière à réduire la tension au niveau de l'électrode de référence (G) du dispositif semi-conducteur de puissance (P) et à réduire l'intensité du courant qui traverse le dispositif semi-conducteur de puissance (P).
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