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1. WO1996010293 - SAW DEVICE

Publication Number WO/1996/010293
Publication Date 04.04.1996
International Application No. PCT/JP1995/000312
International Filing Date 28.02.1995
IPC
H03H 9/02 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
H03H 9/145 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
125Driving means, e.g. electrodes, coils
145for networks using surface acoustic waves
H03H 9/25 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25Constructional features of resonators using surface acoustic waves
CPC
H03H 9/02543
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02543Characteristics of substrate, e.g. cutting angles
H03H 9/02551
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02543Characteristics of substrate, e.g. cutting angles
02551of quartz substrates
H03H 9/02834
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02818Means for compensation or elimination of undesirable effects
02834of temperature influence
H03H 9/02858
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02818Means for compensation or elimination of undesirable effects
02858of wave front distortion
H03H 9/14547
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
125Driving means, e.g. electrodes, coils
145for networks using surface acoustic waves
14544Transducers of particular shape or position
14547Fan shaped; Tilted; Shifted; Slanted; Tapered; Arched; Stepped finger transducers
H03H 9/14594
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
125Driving means, e.g. electrodes, coils
145for networks using surface acoustic waves
14544Transducers of particular shape or position
14594Plan-rotated or plan-tilted transducers
Applicants
  • SEIKO EPSON CORPORATION [JP]/[JP] (AllExceptUS)
  • TAKAGI, Michiaki [JP]/[JP] (UsOnly)
  • MOMOSAKI, Eishi [JP]/[JP] (UsOnly)
  • IKUSAKA, Yoshinori [JP]/[JP] (UsOnly)
Inventors
  • TAKAGI, Michiaki
  • MOMOSAKI, Eishi
  • IKUSAKA, Yoshinori
Agents
  • SUZUKI, Kisaburo
Priority Data
6/23521029.09.1994JP
6/25687121.10.1994JP
6/27750311.11.1994JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SAW DEVICE
(FR) DISPOSITIF A ONDES ACOUSTIQUES DE SURFACE
Abstract
(EN)
A SAW device using surface acoustic waves, which has a high Q value representative of a resonance sharpness, excellent frequency temperature characteristics and excellent short-term frequency stability. The device is formed so that IDT and reflector are parallel-arranged in the direction of propagation of a phase of a surface acoustic wave so as to be effective in the power flow direction as well which is the direction of propagation of the energy of a surface acoustic wave, whereby the energy of a surface acoustic wave is efficiently confined in the device. The production of an SAW device using a crystal piece having excellent frequency temperature characteristics, and angle $g(u) of 25° - 45° and an angle $g(f) of 40° - 47°, and a SAW device using a crystal piece having excellent short-term stability, and angle $g(u) of 4° - 7° and an angle $g(f) satisfying the relation, $g(u) = 2.775 x ($g(f) - 32.5) + 6.5 can also be attained.
(FR)
L'invention concerne un dispositif utilisant des ondes acoustiques de surface ayant une valeur Q élevée, ce qui correspond à une haute netteté de la résonance, d'excellentes caractéristiques de fréquence en fonction de la température et une excellente stabilité en fréquence à court terme. Le dispositif est formé de manière à ce que l'IDT et le réflecteur soient disposés parallèlement dans la direction de propagation d'une phase d'une onde acoustique de surface, de manière à être efficace dans la direction empruntée par la puissance, qui est également la direction de propagation de l'énergie d'une onde acoustique de surface, grâce à quoi l'énergie de l'onde acoustique de surface est effectivement confinée au dispositif. On peut réaliser ainsi un dispositif à ondes acoustiques de surface utilisant un élément de cristal ayant d'excellentes caractéristiques de fréquence en température, un angle $g(u) de 25° - 45° et un angle $g(f) de 40° - 47°, et on peut réaliser un dispositif à ondes acoustiques de surface ayant une excellente stabilité à court terme, un angle $g(u) de 4° - 7° et un angle $g(f) satisfaisant à la relation $g(u) = 2,775 x ($g(f) - 32,5) + 6,5.
Also published as
Latest bibliographic data on file with the International Bureau