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1. WO1996008822 - SENSE AMPLIFIER FOR NON-VOLATILE SEMICONDUCTOR MEMORY

Publication Number WO/1996/008822
Publication Date 21.03.1996
International Application No. PCT/IB1995/000702
International Filing Date 28.08.1995
Chapter 2 Demand Filed 11.04.1996
IPC
G11C 16/28 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
26Sensing or reading circuits; Data output circuits
28using differential sensing or reference cells, e.g. dummy cells
G11C 29/38 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
29Checking stores for correct operation; Testing stores during standby or offline operation
04Detection or location of defective memory elements
08Functional testing, e.g. testing during refresh, power-on self testing or distributed testing
12Built-in arrangements for testing, e.g. built-in self testing
38Response verification devices
G11C 29/50 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
29Checking stores for correct operation; Testing stores during standby or offline operation
04Detection or location of defective memory elements
50Marginal testing, e.g. race, voltage or current testing
CPC
G11C 16/04
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
04using variable threshold transistors, e.g. FAMOS
G11C 16/28
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
26Sensing or reading circuits; Data output circuits
28using differential sensing or reference cells, e.g. dummy cells
G11C 29/38
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
29Checking stores for correct operation ; ; Subsequent repair; Testing stores during standby or offline operation
04Detection or location of defective memory elements ; , e.g. cell constructio details, timing of test signals
08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
12Built-in arrangements for testing, e.g. built-in self testing [BIST] ; or interconnection details
38Response verification devices
G11C 29/50
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
29Checking stores for correct operation ; ; Subsequent repair; Testing stores during standby or offline operation
04Detection or location of defective memory elements ; , e.g. cell constructio details, timing of test signals
50Marginal testing, e.g. race, voltage or current testing
Applicants
  • PHILIPS ELECTRONICS N.V. [NL]/[NL]
  • PHILIPS NORDEN AB [SE]/[SE] (SE)
Inventors
  • TRODDEN, Thomas, John
Agents
  • VERDONK, Peter, Lambert, Frans, Maria
Priority Data
08/308,04716.09.1994US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SENSE AMPLIFIER FOR NON-VOLATILE SEMICONDUCTOR MEMORY
(FR) AMPLIFICATEUR DE DETECTION POUR MEMOIRE NON REMANENTE A SEMI-CONDUCTEURS
Abstract
(EN)
A non-volatile semiconductor memory utilizes a sense amplifier to compare the logic state of a memory cell to that of a reference cell. Loads that supply currents to the memory cell and the reference cell form a current mirror, whose amplification factor is controllably dependent on the level of the supply voltage. This configuration renders the sensitivity of the amplifier higher with a lower supply voltage than with a higher supply voltage.
(FR)
Une mémoire non rémanente à semi-conducteurs utilise un amplificateur de détection pour comparer l'état logique d'une cellule mémoire à l'état logique d'une cellule de référence. Les charges qui appliquent des courants à la cellule mémoire et à la cellule de référence forment un miroir de courant dont le facteur d'amplification est fonction de manière régulable du niveau de tension d'alimentation. Cette configuration permet une sensibilité d'amplificateur supérieure pour une tension d'alimentation inférieure.
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