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Machine translation
1. (WO1996007661) FORMATION OF A METALORGANIC COMPOUND FOR GROWING EPITAXIAL SEMICONDUCTOR LAYERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1996/007661    International Application No.:    PCT/GB1995/002089
Publication Date: 14.03.1996 International Filing Date: 04.09.1995
Chapter 2 Demand Filed:    28.03.1996    
IPC:
C07F 5/00 (2006.01), C07F 9/50 (2006.01), C30B 25/02 (2006.01)
Applicants: THE SECRETARY OF STATE FOR DEFENCE [GB/GB]; Defence Evaluation and Research Agency, St. Andrews Road, Malvern, Worcestershire WR14 3PS (GB) (For All Designated States Except US).
JONES, Anthony, Copeland [GB/GB]; (GB) (For US Only).
RUSHWORTH, Simon, Andrew [GB/GB]; (GB) (For US Only).
MARTIN, Trevor [GB/GB]; (GB) (For US Only).
WHITTAKER, Timothy, John [GB/GB]; (GB) (For US Only).
FREER, Richard, William [GB/GB]; (GB) (For US Only)
Inventors: JONES, Anthony, Copeland; (GB).
RUSHWORTH, Simon, Andrew; (GB).
MARTIN, Trevor; (GB).
WHITTAKER, Timothy, John; (GB).
FREER, Richard, William; (GB)
Agent: ROYSTONS; Tower Building, Water Street, Liverpool, Merseyside L3 1BA (GB)
Priority Data:
9417707.8 02.09.1994 GB
9508702.9 28.04.1995 GB
Title (EN) FORMATION OF A METALORGANIC COMPOUND FOR GROWING EPITAXIAL SEMICONDUCTOR LAYERS
(FR) PREPARATION D'UN COMPOSE ORGANOMETALLIQUE PERMETTANT D'EFFECTUER LE TIRAGE DE COUCHES EPITAXIALES DE SEMI-CONDUCTEURS
Abstract: front page image
(EN)Semiconductor devices are prepared by growth of epitaxial layers on a substrate from metalorganic compounds of the formula MR¿3?, R being an alkyl group, or its amine adduct. The metalorganic compound was prepared by reacting a Grignard reagent with the metal halide in an amine solvent.
(FR)On prépare des dispositifs à semi-conducteurs par tirage de couches épitaxiales sur un substrat à partir de composés organométalliques de la formule MR¿3?, R représentant un groupe alkyle, ou de son composé d'addition d'amine. On a préparé le composé organométallique en mettant un réactif de Grignard en réaction avec l'halogénure de métal dans un solvant d'amine.
Designated States: CA, CN, GB, JP, KR, US.
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: English (EN)
Filing Language: English (EN)