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1. WO1996006121 - METAL ION REDUCTION IN NOVOLAK RESIN SOLUTION USING AN ANION EXCHANGE RESIN

Publication Number WO/1996/006121
Publication Date 29.02.1996
International Application No. PCT/US1995/009855
International Filing Date 03.08.1995
Chapter 2 Demand Filed 21.03.1996
IPC
C08G 8/00 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
8Condensation polymers of aldehydes or ketones with phenols only
C08G 8/10 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
8Condensation polymers of aldehydes or ketones with phenols only
04of aldehydes
08of formaldehyde, e.g. of formaldehyde formed in situ
10with phenol
C08G 8/28 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
8Condensation polymers of aldehydes or ketones with phenols only
28Chemically modified polycondensates
G03F 7/004 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/023 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
022Quinonediazides
023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
CPC
C08G 8/00
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
8Condensation polymers of aldehydes or ketones with phenols only
C08G 8/10
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
8Condensation polymers of aldehydes or ketones with phenols only
04of aldehydes
08of formaldehyde, e.g. of formaldehyde formed in situ
10with phenol
C08G 8/28
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
8Condensation polymers of aldehydes or ketones with phenols only
28Chemically modified polycondensates
G03F 7/004
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/0236
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
022Quinonediazides
023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
0233characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
Applicants
  • HOECHST CELANESE CORPORATION [US/US]; Route 202-206 North Somerville, NJ 08876, US
Inventors
  • RAHMAN, M., Dalil; US
Agents
  • SAYKO, Andrew, F., Jr. ; Hoechst Celanese Corporation 70 Meister Avenue Somerville, NJ 08876, US
Priority Data
08/294,45323.08.1994US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METAL ION REDUCTION IN NOVOLAK RESIN SOLUTION USING AN ANION EXCHANGE RESIN
(FR) REDUCTION D'IONS METALLIQUES DANS DES SOLUTIONS DE NOVOLAQUE AU MOYEN D'UN RESINE D'ECHANGE ANIONIQUE
Abstract
(EN)
The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a very low level of metals ions, utilizing a specially treated anion exchange resin. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.
(FR)
Procédés de production de novolaques insolubles dans l'eau et solubles dans des substances alcalines aqueuses, à très faible teneur en ions métalliques, au moyen d'une résine d'échange anionique traitée à cet effet. Un procédé de production d'une composition de résine photosensible à très faible teneur en ions métalliques à partir de telles novolaques est également décrit, ce procédé permettant également de produire des dispositifs à semi-conducteurs à partir de telles compositions.
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