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1. WO1996005616 - ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT

Publication Number WO/1996/005616
Publication Date 22.02.1996
International Application No. PCT/US1995/009646
International Filing Date 17.08.1995
Chapter 2 Demand Filed 15.03.1996
IPC
H01L 27/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
CPC
H01L 27/0248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0248for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
H01L 27/0255
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0248for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
0251for MOS devices
0255using diodes as protective elements
Applicants
  • DAVID SARNOFF RESEARCH CENTER, INC. [US/US]; 201 Washington Road CN5300 Princeton, NJ 08543-5300, US
Inventors
  • AVERY, Leslie, Ronald; US
Agents
  • BURKE, William, J.; David Sarnoff Research Center, Inc. 201 Washington Road CN5300 Princeton, NJ 08543-5300, US
Priority Data
08/291,80817.08.1994US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
(FR) CIRCUIT DE PROTECTION CONTRE LES DECHARGES ELECTROSTATIQUES
Abstract
(EN)
An electrical circuit including an NMOS (20) or lateral NPN bipolar transistor (136) includes a zener diode (28) connected thereto to provide ESD protection for the transistor. The NMOS transistor (20) includes an N-type source (22), an N-type drain (24), a p-type channel region and a gate (26) over and insulated from the channel region. The zener diode (28) is electrically connected between the gate (26) and the drain (24) of the NMOS transistor (20) with the anode (30) of the zener diode (28) being connected to the gate (26) and the cathode (32) of the zener diode (28) being connected to the drain. For some purposes the anode (30) of the zener diode (28) is positioned close to the gate (26) to provide the desired ESD protection. The lateral NPN bipolar transistor (136) includes an N-type emitter (138) and collector (140) and a P-type base (142). The zener diode (144) is connected between the collector (140) and the base (142) with the anode (146) of the zener diode (144) being connected to the base (142) and the cathode (148) of the zener diode (144) being connected to the collector (140).
(FR)
Un circuit électrique comprenant un transistor NMOS (20) ou un transistor bipolaire latéral NPN (136) comporte une diode Zener (28) couplée audit transistor pour le protéger contre les décharges électrostatiques. Le transistor NMOS (20) comprend une source de type N (22), un drain de type N (24), une région de canal de type p et une grille (26) située au-dessus de ladite région et isolée de cette dernière. La diode Zener (28) est couplée électriquement entre la grille (26) et le drain (24) du transistor NMOS (20), l'anode (30) de la diode Zener (28) étant couplée à la grille (26) et la cathode (32) de la diode Zener (28) étant couplée au drain. Afin de remplir certaines conditions, l'anode (30) de la diode Zener (28) est placée à proximité de la grille (26), de manière à assurer la protection souhaitée contre les décharges électrostatiques. Le transistor bipolaire latéral NPN (136) comprend un émetteur de type N (138), un collecteur (140) et une base de type P (142). La diode Zener (144) est couplée entre le collecteur (140) et la base (142), l'anode (146) de la diode Zener (144) étant couplée à la base (142) et la cathode (148) de la diode Zener (144) étant couplée au collecteur.
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