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1. WO1996005612 - A FINE PITCH LEAD FRAME AND METHOD FOR MANUFACTURING SAME

Publication Number WO/1996/005612
Publication Date 22.02.1996
International Application No. PCT/US1995/010062
International Filing Date 08.08.1995
IPC
C23F 1/02 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
1Etching metallic material by chemical means
02Local etching
H01L 21/48 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/06-H01L21/326201
H01L 23/495 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488consisting of soldered or bonded constructions
495Lead-frames
CPC
C23F 1/02
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
1Etching metallic material by chemical means
02Local etching
H01L 21/4828
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4821Flat leads, e.g. lead frames with or without insulating supports
4828Etching
H01L 23/49548
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements
488consisting of soldered ; or bonded; constructions
495Lead-frames ; or other flat leads
49541Geometry of the lead-frame
49548Cross section geometry
H01L 23/49558
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements
488consisting of soldered ; or bonded; constructions
495Lead-frames ; or other flat leads
49541Geometry of the lead-frame
49558Insulating layers on lead frames, e.g. bridging members
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Y10T 29/49121
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
29Metal working
49Method of mechanical manufacture
49002Electrical device making
49117Conductor or circuit manufacturing
49121Beam lead frame or beam lead device
Applicants
  • NATIONAL SEMICONDUCTOR CORPORATION [US/US]; M/S 16-135 1090 Kifer Road Sunnyvale, CA 94086-3737, US
Inventors
  • FOLGESON, Harry, J.; US
Agents
  • PITRUZZELLA, Vincenzo, D.; National Semiconductor Corporation M/S 16-135 1090 Kifer Road Sunnyvale, CA 94086-3737, US
Priority Data
08/287,87209.08.1994US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A FINE PITCH LEAD FRAME AND METHOD FOR MANUFACTURING SAME
(FR) GRILLE DE CONNEXION A PAS REDUIT ET PROCEDE DE FABRICATION
Abstract
(EN)
A fine pitch lead frame and a method for manufacturing the same is disclosed herein. A preferred embodiment of a fine pitch lead frame is generally comprised of a plurality of fine pitch leads (42), a die pad area (217, 72), and die pad area support arms (15). The leads are comprised of a base lead portion formed in an unetched region (32) and a fine pitch lead tip portion (42) formed in an etched region (30) on an electrically conductive material. The base lead portions (40) are substantially the same thickness as the conductive substrate (32) and the lead tip portions (42) are of a smaller thickness. Etching one or more region(s) on an electrically conductive substrate (32) of a substantial uniform thickness to a fraction of the thickness of the unetched regions (30) allows for the formation of fine pitch lead tips (42) in the etched region(s). Some possible methods for forming the leads (42) include an additional etching, stamping out the leads with a finely tapered stamp tool punch or using conventional stamp tool punches (180) in conjunction with finer stamp tool punches (80, 82) to create the fine pitch lead tips (42). There is also disclosed examples to various methods for forming the fine pitch lead frame in different configurations.
(FR)
On décrit une grille de connexion à pas réduit et un procédé permettant de la fabriquer. Une variante préférée de cette grille de connexion comporte plusieurs connexions à pas réduit (42), une plage de connexion de puce (217, 72), et des bras de support (15) pour plage de connexion de puce. Les connexions comprennent des bases formées dans une zone non gravée (42), et des extrémités à pas réduit (42) formées dans une zone gravée (30), sur un matériau conducteur d'électricité. Ces bases (40) présentent sensiblement la même épaisseur que le substrat conducteur (32) et ces extrémités (42) une épaisseur plus faible. Graver une ou plusieurs zones sur un substrat conducteur d'électricité (32) d'épaisseur sensiblement uniforme jusqu'à parvenir à une fraction de l'épaisseur des régions non gravées (30) permet de former des extrémités à pas réduit (42) dans les régions gravées. Des procédés permettant de former ces connexions (42) comprennent une gravure complémentaire, l'estampage des connexions avec un poinçon d'estampage très effilé ou l'utilisation des poinçons d'estampage classiques (180) en conjonction avec des poinçons plus fins (80, 82) pour obtenir ces extrémités à pas réduit (42). On décrit aussi des exemples des différents procédés permettant de donner à une grille de connexion à pas réduit des configurations différentes.
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