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1. WO1996005507 - METHOD OF MANUFACTURING A GAS SENSOR

Publication Number WO/1996/005507
Publication Date 22.02.1996
International Application No. PCT/DE1995/001035
International Filing Date 07.08.1995
IPC
G01N 27/12 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
02by investigating impedance
04by investigating resistance
12of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid
CPC
G01N 27/12
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
02by investigating the impedance of the material
04by investigating resistance
12of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid ; , for detecting components in the fluid
Applicants
  • SIEMENS AKTIENGESELLSCHAFT [DE/DE]; Wittelsbacherplatz 2 D-80333 München, DE (AllExceptUS)
  • HACKER, Birgitta [DE/DE]; DE (UsOnly)
  • KORNELY, Susanne [DE/DE]; DE (UsOnly)
  • FLEISCHER, Maximilian [DE/DE]; DE (UsOnly)
  • MEIXNER, Hans [DE/DE]; DE (UsOnly)
Inventors
  • HACKER, Birgitta; DE
  • KORNELY, Susanne; DE
  • FLEISCHER, Maximilian; DE
  • MEIXNER, Hans; DE
Priority Data
P 44 28 155.209.08.1994DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUR HERSTELLUNG EINES GASSENSORS
(EN) METHOD OF MANUFACTURING A GAS SENSOR
(FR) PROCEDE DE FABRICATION D'UN DETECTEUR DE GAZ
Abstract
(DE)
Zur Erhöhung der Leitfähigkeit von Gassensoren zur Detektion reduzierender Gase wird auf ein Substrat (S) eine Ga2O3-Schicht (A) als gassensitive Schicht aufgebracht und bei einer Temperatur von 750 °C bis 850 °C getempert, so daß die Ga2O3-Schicht akzeptorfrei ist.
(EN)
In order to increase the conductivity of gas sensors used for detecting reducing gases, a Ga2O3 layer (A) is applied to a substrate (S) to act as the gas-sensitive layer and tempered at a temperature of between 750 and 850 °C to ensure that the Ga2O3 layer is free of acceptors.
(FR)
Afin d'augmenter la conductivité de détecteurs de gaz conçus pour la détection de gaz réducteurs, on dépose sur un substrat (S) une couche (A) de Ga2O3 servant de couche sensible aux gaz, qui est ensuite trempée à une température comprise entre 750 et 850 °C afin qu'elle soit exempte d'accepteurs.
Also published as
Latest bibliographic data on file with the International Bureau