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1. WO1996005337 - FORMATION OF DIAMOND MATERIALS BY RAPID-HEATING AND RAPID-QUENCHING OF CARBON-CONTAINING MATERIALS

Publication Number WO/1996/005337
Publication Date 22.02.1996
International Application No. PCT/US1995/010034
International Filing Date 09.08.1995
Chapter 2 Demand Filed 08.03.1996
IPC
C01B 31/06 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
31Carbon; Compounds thereof
02Preparation of carbon; Purification
06Diamond
C30B 1/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
1Single-crystal growth directly from the solid state
CPC
C01B 32/26
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
32Carbon; Compounds thereof
25Diamond
26Preparation
C30B 1/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
1Single-crystal growth directly from the solid state
C30B 29/04
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
04Diamond
Applicants
  • QQC, INC. [US/US]; 12825 Ford Road Dearborn, MI 48126, US (AllExceptUS)
  • MISTRY, Pravin [GB/US]; US (UsOnly)
  • LIU, Shengzhong [CN/US]; US (UsOnly)
Inventors
  • MISTRY, Pravin; US
  • LIU, Shengzhong; US
Agents
  • BRENNAN, Michael, P.; Harness, Dickey & Pierce, P.L.C. P.O. Box 828 Bloomfield Hills, MI 48303, US
Priority Data
08/287,72609.08.1994US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) FORMATION OF DIAMOND MATERIALS BY RAPID-HEATING AND RAPID-QUENCHING OF CARBON-CONTAINING MATERIALS
(FR) FORMATION DE MATIERES DE TYPE DIAMANT PAR CHAUFFAGE RAPIDE ET REFROIDISSEMENT RAPIDE DE MATERIAUX CONTENANT DU CARBONE
Abstract
(EN)
Diamond materials are formed by sandwiching a carbon-containing material (106) in a gap between two electrodes (102 and 104). A high amperage current is applied by power supply (110) between the two electrode plates so as to cause rapid heating of the carbon-containing material. The current is sufficient to elevate the temperature of the carbon-containing material over 1000 °C. The carbon-containing material is then rapidly quenched by a heatsink (130). The heatsink can be in contact with one of the electrodes. This process is repeated until the diamond has formed. Also, a shielding or inert gas (140 and 142) is used during the process.
(FR)
On forme des matières de type diamant en prenant en sandwich un matériau contenant du carbone (106) dans un espace entre deux électrodes (102 et 104). On applique un courant à haute intensité au moyen d'une alimentation (110) entre les deux plaques d'électrodes de manière à provoquer un chauffage rapide du matériau contenant du carbone. Le courant est suffisant pour augmenter la température du matériau contenant du carbone à plus de 1000 °C. Le matériau contenant du carbone est soumis à un refroidissement rapide par un dissipateur de chaleur (130). Ce dissipateur de chaleur peut être en contact avec l'une des électrodes. Ce procédé est repété jusqu'à la formation du diamant. Un gaz inerte ou protecteur (140 et 142) est étalement utilisé au cours de ce procédé.
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