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1. WO1996004999 - WAFER RINSING SYSTEM AND FILTER BANK

Publication Number WO/1996/004999
Publication Date 22.02.1996
International Application No. PCT/US1995/009718
International Filing Date 02.08.1995
Chapter 2 Demand Filed 28.02.1996
IPC
H01L 21/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
H01L 21/02052
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02043Cleaning before device manufacture, i.e. Begin-Of-Line process
02052Wet cleaning only
H01L 21/67028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
Y10S 134/902
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
134Cleaning and liquid contact with solids
902Semiconductor wafer
Y10S 210/90
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
210Liquid purification or separation
90Ultra pure water, e.g. conductivity water
Applicants
  • YIELDUP INTERNATIONAL CORPORATION [US/US]; 2672 Bayshore Parkway Mountain View, CA 94043, US
Inventors
  • MOHINDRA, Raj; US
  • BHUSHAN, Abhay, K.; US
  • BHUSHAN, Rajiv; US
  • PURI, Suraj; US
Agents
  • OGAWA, Richard, T. ; Townsend and Townsend and Crew Steuart Street Tower 20th floor One Market Plaza San Francisco, CA 94105, US
Priority Data
08/285,31603.08.1994US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) WAFER RINSING SYSTEM AND FILTER BANK
(FR) SYSTEME DE RINÇAGE DE TRANCHES ET GROUPE DE FILTRAGE
Abstract
(EN)
The invention relates to a wafer rinsing system for rinsing chemicals and particles off of wafers without introducing contaminants. The system reduces the particle count on wafers by filtering the water and the gas used during rinsing at the wet bench. The system includes a rinsing unit (1), a local water filter bank (2), a local gas filtering system (3), an H2O2 injection unit (4), an auxiliary chemical injection unit (5), and a controller (6) for operating the other components. The water filter bank (2) provides a multiple stage filtering system to eliminate particles without a substantial drop in water pressure. The H2O2 injection unit (4) provides a local source of H2O2 to clean the filter (2) and rinser (1) and to provide a mechanism for controlling the formation of native oxide on the wafer during rinsing. The auxiliary chemical injection unit (5) provides a chemical additive to the rinsing unit (1) to enhance the wafer cleaning process. The gas filtering system (3) provides clean gas to the rinsing unit (1) and to the injection units (5). The clean gas provides a clean atmosphere over the chemicals in each injection unit (5) and over the water in the rinser (1).
(FR)
Système de rinçage de tranches, servant à éliminer les produits chimiques et les particules présents sur les tranches, sans introduire de nouvelles substances contaminantes. Ce système réduit la quantité de particules dénombrées sur les tranches, par le filtrage de l'eau et du gaz utilisés pendant le rinçage. Il comprend une unité de rinçage (1), un groupe de filtrage d'eau local (2), un système de filtrage de gaz local (3), une unité d'injection de H2O2 (4), une unité supplémentaire d'injection de produit chimique (5), et une unité de commande (6) des autres composants. Le groupe de filtrage d'eau (2) constitue un système de filtrage multi-étages qui élimine les particules sans provoquer une chute sensible de la pression d'eau. L'unité d'injection de H2O2 (4) est une source locale de H2O2 qui nettoie le filtre (2) et l'élément de rinçage (1) et qui constitue un mécanisme de régulation de la formation d'oxyde natif sur la tranche pendant le rinçage. L'unité supplémentaire d'injection de produit chimique (5) fournit un additif chimique à l'unité de rinçage (1) pour améliorer le processus de nettoyage de la tranche. Le système de filtrage de gaz (3) fournit du gaz propre à l'unité de rinçage (1) et aux unités d'injection (5). Ce gaz assure la présence d'une atmosphère propre sur les produits chimiques dans chaque unité d'injection (5), ainsi que sur l'eau dans l'élément de rinçage (1).
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