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1. WO1996004713 - SURFACE ACOUSTIC WAVE DEVICE AND PRODUCTION METHOD THEREOF

Publication Number WO/1996/004713
Publication Date 15.02.1996
International Application No. PCT/JP1995/001554
International Filing Date 04.08.1995
IPC
H03H 9/02 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
H03H 9/145 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
125Driving means, e.g. electrodes, coils
145for networks using surface acoustic waves
H03H 9/25 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25Constructional features of resonators using surface acoustic waves
CPC
H03H 9/02236
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02236of surface skimming bulk wave devices
H03H 9/14538
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
125Driving means, e.g. electrodes, coils
145for networks using surface acoustic waves
14538Formation
H03H 9/25
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
25Constructional features of resonators using surface acoustic waves
Y10T 29/42
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
29Metal working
42Piezoelectric device making
Applicants
  • JAPAN ENERGY CORPORATION [JP/JP]; 10-1, Toranomon 2-chome Minato-ku Tokyo 105, JP (AllExceptUS)
  • OHKUBO, Yukio [JP/JP]; JP (UsOnly)
  • SATO, Takahiro [JP/JP]; JP (UsOnly)
Inventors
  • OHKUBO, Yukio; JP
  • SATO, Takahiro; JP
Agents
  • KITANO, Yoshihito; Exceed Yotsuya 2nd floor 9, Daikyo-cho Shinjuku-ku Tokyo 160, JP
Priority Data
6/27973720.10.1994JP
6/27973820.10.1994JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SURFACE ACOUSTIC WAVE DEVICE AND PRODUCTION METHOD THEREOF
(FR) DISPOSITIF A ONDES ACOUSTIQUES DE SURFACE ET PROCEDE DE PRODUCTION
Abstract
(EN)
A surface acoustic wave device for processing signals of high frequency as high as 1 GHz or above by using surface acoustic waves, which propagate while radiating bulk waves such as a longitudinal wave type leaky wave perpendicular to a piezoelectric substrate, is given a structure of an IDT having a sufficiently small electrical resistance without increasing a propagation loss. The device includes a piezoelectric substrate (10) and an electrode comprising a conductive film (12) for exciting, receiving, reflecting and propagating an elastic surface wave on the piezoelectric substrate (10), and the surface acoustic wave propagates along the surface of the piezoelectric substrate (10) while radiating at least one transverse wave component of a bulk wave perpendicular to the surface of the piezoelectric substrate (10). The thickness of an insulating film of a first region is different from the thickness of an insulating film (18) of a second region so that the acoustic impedance to the surface acoustic wave becomes substantially equal both in the first region where the conductive film (12) inside the electrode is disposed and the second region where the conductive film inside the electrode is not disposed.
(FR)
Dispositif à ondes acoustiques de surface destiné à traiter des signaux haute fréquence, d'une fréquence égale ou supérieure à 1 GHz, en utilisant des ondes acoustiques de surface, qui se propagent tout en rayonnant des ondes de volume telles que des ondes de fuite de type longitudinal, perpendiculaires à un substrat piézo-électrique. Ce dispositif présente la structure d'un IDT possédant une résistance électrique suffisamment faible sans augmenter la perte par propagation. Ce dispositif comprend un substrat piézo-électrique (10) et une électrode comportant un film conducteur (12) qui excite, reçoit, réfléchit et propage une onde de surface élastique sur le substrat piézo-électrique (10), et l'onde acoustique de surface se propage le long de la surface du substrat piézo-électrique (10) tout en rayonnant au moins une composante ondulatoire d'une onde de volume perpendiculaire à la surface du substrat piézo-électrique (10). L'épaisseur d'un film isolant d'une première région est différente de l'épaisseur d'un film isolant (18) d'une deuxième région de sorte que l'impédance acoustique vis-à-vis de l'onde acoustique de surface devient sensiblement égale aussi bien dans la première région où est situé le film conducteur (12) à l'intérieur de l'électrode, que dans la deuxième région dépourvue de film conducteur à l'intérieur de l'électrode.
Also published as
Latest bibliographic data on file with the International Bureau