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1. WO1996004686 - MID INFRARED LIGHT EMITTING DIODE

Publication Number WO/1996/004686
Publication Date 15.02.1996
International Application No. PCT/GB1995/001679
International Filing Date 17.07.1995
Chapter 2 Demand Filed 27.02.1996
IPC
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 33/0008
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0004Devices characterised by their operation
0008having p-n or hi-lo junctions
H01L 33/305
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
305characterised by the doping materials
Applicants
  • THE SECRETARY OF STATE FOR DEFENCE [GB/GB]; Defence Evaluation & Research Agency DRA Farnborough Hampshire GU14 6TD, GB (AllExceptUS)
  • KANE, Michael, John [GB/GB]; GB (UsOnly)
  • LEE, David [GB/GB]; GB (UsOnly)
  • WIGHT, David, Robert [GB/GB]; GB (UsOnly)
  • BOUD, John, Michael [GB/GB]; GB (UsOnly)
Inventors
  • KANE, Michael, John; GB
  • LEE, David; GB
  • WIGHT, David, Robert; GB
  • BOUD, John, Michael; GB
Agents
  • BOWDERY, A., O.; Defence Evaluation & Research Agency Intellectual Property Dept. R69 Building DRA Farnborough Hampshire GU14 6TD, GB
Priority Data
9415528.001.08.1994GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MID INFRARED LIGHT EMITTING DIODE
(FR) DIODE ELECTROLUMINESCENTE A EMISSION DANS L'INFRAROUGE MOYEN
Abstract
(EN)
A mid-infrared emitting diode with a substrate which is transparent to radiation produced by the device by virtue of the Moss-Burstein shift which is induced in the substrate by heavy doping. Emission from the device takes place via said substrate with a significant increase in external efficiency due to avoidance of obscuration by metallic contact.
(FR)
Diode électroluminescente émettant dans l'infrarouge moyen, comportant un substrat transparent aux rayonnements produits par le dispositif en vertu du décalage de Moss-Burstein qui est induit dans le substrat par un fort dopage. L'émission à partir du dispositif s'effectue à travers ledit substrat avec une augmentation notable du rendement extérieur dans la mesure où l'obscurcissement par contact métallique est évité.
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