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1. WO1996004685 - A POWER SEMICONDUCTOR DEVICE

Publication Number WO/1996/004685
Publication Date 15.02.1996
International Application No. PCT/GB1995/001857
International Filing Date 04.08.1995
Chapter 2 Demand Filed 23.02.1996
IPC
H01L 21/22 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
H01L 21/331 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
33the devices comprising three or more electrodes
331Transistors
H01L 29/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
30characterised by physical imperfections; having polished or roughened surface
32the imperfections being within the semiconductor body
CPC
H01L 21/221
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
221of killers
H01L 29/1004
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
1004Base region of bipolar transistors
H01L 29/102
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
1012Base regions of thyristors
102Cathode base regions of thyristors
H01L 29/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
30characterised by physical imperfections; having polished or roughened surface
32the imperfections being within the semiconductor body
H01L 29/66295
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66234Bipolar junction transistors [BJT]
66272Silicon vertical transistors
66295with main current going through the whole silicon substrate, e.g. power bipolar transistor
Applicants
  • TEXAS INSTRUMENTS LIMITED [GB/GB]; Wellington House 61-73 Staines Road West Sunbury on Thames TW16 7AH, GB (GB)
  • TEXAS INSTRUMENTS INCORPORATED [US/US]; 13500 North Central Expressway Dallas, TX 75265, US (AT, BE, CH, DE, DK, ES, FR, GB, GR, IE, IT, JP, LU, MC, NL, PT, SE)
  • GARNHAM, David, Arthur [GB/GB]; GB (UsOnly)
  • RUTGERS, Koenraad, Teunis, Francis [NL/GB]; GB (UsOnly)
Inventors
  • GARNHAM, David, Arthur; GB
  • RUTGERS, Koenraad, Teunis, Francis; GB
Agents
  • LEGG, Cyrus, James, Grahame ; Abel & Imray Northumberland House 303-306 High Holborn London WC1V 7LH, GB
Priority Data
9415874.805.08.1994GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A POWER SEMICONDUCTOR DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR DE PUISSANCE
Abstract
(EN)
A semiconductor device having two or more p-n junctions, being in particular a bipolar transistor or a thyristor. The device has a gold ion implant (14) in a region of the device between two of or the two p-n junctions, which region is the base (2) in the case of a bipolar transistor, located away from the current carrying active region of the device. The device has a low resistance and may be turned off rapidly because the implanted gold provides recombination centres which act as a sink for carriers drawing them from the active region.
(FR)
Dispositif semi-conducteur, notamment transistor bipolaire ou thyristor, possédant deux ou plusieurs jonctions p-n. Ce dispositif comporte un implant d'ions or (14) dans une région située entre deux des jonctions p-n, cette région étant la base (2) dans le cas d'un transistor bipolaire, éloignée de la région active conductrice de courant du dispositif. Ce dernier présente une faible résistance et peut être mis hors fonction rapidement, dès lors que l'or implanté comporte des centres de recombinaison qui servent de dissipateurs pour les porteurs, extrayant ceux-ci de la région active.
Also published as
Latest bibliographic data on file with the International Bureau