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1. WO1996004678 - METHOD OF MANUFACTURING HIGH PERFORMANCE BIPOLAR TRANSISTORS IN A BICMOS PROCESS

Publication Number WO/1996/004678
Publication Date 15.02.1996
International Application No. PCT/US1995/009880
International Filing Date 03.08.1995
IPC
H01L 21/8249 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8248Combination of bipolar and field-effect technology
8249Bipolar and MOS technology
CPC
H01L 21/8249
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8248Combination of bipolar and field-effect technology
8249Bipolar and MOS technology
Y10S 148/05
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
148Metal treatment
05Etch and refill
Y10S 148/124
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
148Metal treatment
124Polycrystalline emitter
Applicants
  • NATIONAL SEMICONDUCTOR CORPORATION [US/US]; 1090 Kifer Road, M/S 16-135 Sunnyvale, CA 95086-3737, US
Inventors
  • DARMAWAN, Johan, A.; US
Agents
  • RODDY, Richard, J.; National Semiconductor Corporation 1090 Kifer Road, M/S 16-135 Sunnyvale, CA 94086-3737, US
Priority Data
08/285,31503.08.1994US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF MANUFACTURING HIGH PERFORMANCE BIPOLAR TRANSISTORS IN A BICMOS PROCESS
(FR) PROCEDE DE FABRICATION DE TRANSISTORS BIPOLAIRES HAUTE PERFORMANCE SELON UNE TECHNOLOGIE BICMOS
Abstract
(EN)
A BiCMOS manufacturing process for fabricating an emitter of a bipolar transistor includes the steps of forming footings on a silicon substrate for prospectively bearing edges of the emitter, forming a polysilicon emitter having a medial portion overlying the silicon substrate and lateral edges on the footings, removing the footings leaving notches at the lateral edges of the polysilicon emitter and refilling the notches with a thin polysilicon film. The bipolar transistor in a BiCMOS integrated circuit resulting from this process includes a silicon semiconductor substrate having a substantially flat surface, a field oxide film laterally bounding the silicon semiconductor substrate and a polysilicon emitter abutting the flat surface of the silicon semiconductor substrate.
(FR)
Un procédé de fabrication BICMOS permettant de fabriquer un émetteur d'un transistor bipolaire consiste à former des ergots sur un substrat de silicium destiné à supporter les bords d'un émetteur, à produire un émetteur de polysilicium dont la partie intermédiaire recouvre le substrat de silicium et les bords latéraux sur les ergots, à retirer les ergots laissant des empreintes au niveau des bords latéraux de l'émetteur de polysilicium et à remplir les empreintes d'un film mince de polysilicium. Le transistor bipolaire d'un circuit intégré BICMOS obtenu par ce procédé comprend un substrat semi-conducteur à surface sensiblement plate, un film d'oxyde de champ reliant latéralement le substrat semi-conducteur de silicium et un émetteur de polysilicium joignant la surface plate du substrat semi-conducteur de silicium.
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