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1. WO1996004677 - SPUTTER EPITAXY OF COMPONENT-QUALITY SILICON-GERMANIUM HETEROSTRUCTURES

Publication Number WO/1996/004677
Publication Date 15.02.1996
International Application No. PCT/CH1995/000164
International Filing Date 17.07.1995
IPC
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/203 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203using physical deposition, e.g. vacuum deposition, sputtering
CPC
H01L 21/02381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02373Group 14 semiconducting materials
02381Silicon, silicon germanium, germanium
H01L 21/0245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02441Group 14 semiconducting materials
0245Silicon, silicon germanium, germanium
H01L 21/0251
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02494Structure
02496Layer structure
0251Graded layers
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
H01L 21/02573
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
0257Doping during depositing
02573Conductivity type
H01L 21/02631
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02612Formation types
02617Deposition types
02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Applicants
  • EIDGENÖSSISCHE TECHNISCHE HOCHSCHULE ZÜRICH [CH]/[CH] (AllExceptUS)
  • VON KÄNEL, Hans [CH]/[CH]
  • SUTTER, Peter [CH]/[CH]
Inventors
  • VON KÄNEL, Hans
  • SUTTER, Peter
Priority Data
2434/94-103.08.1994CH
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) SPUTTER-EPITAXIE VON SILIZIUM-GERMANIUM HETEROSTRUKTUREN IN BAUELEMENT-QUALITÄT
(EN) SPUTTER EPITAXY OF COMPONENT-QUALITY SILICON-GERMANIUM HETEROSTRUCTURES
(FR) EPITAXIE PAR PULVERISATION CATHODIQUE D'HETEROSTRUCTURES DE SILICIUM-GERMANIUM PRESENTANT LA QUALITE COMPOSANTS
Abstract
(DE)
Der Sputter-Epitaxie-Prozess gestattet die Herstellung von epitaktischen Heterostrukturen aus Si, Ge und Si1-xGex-Legierungen. Die Halbleiter-Eigenschaften von in situ aus der Gasphase oder aus festen Targets dotierten Si/Ge Heterostrukturen sind vergleichbar mit solchen, die durch MBE oder UHV-CVD synthetisiert werden können. Insbesondere sind hohe Ladungsträger-Beweglichkeiten in modulationsdotierten verspannten Si- oder Ge-Quantentöpfen erzielbar als Grundlage für Quanten-Halleffekt-Strukturen und MODFETs. Das Sputter-Epitaxie Verfahren lässt sich für alle möglichen elektronischen und optoelektronischen Bauelemente aus Si/Ge Heterostrukturen verwenden.
(EN)
The sputter epitaxy process allows the production of epitaxial heterostructures of Si, Ge and Si1-xGex alloys. The semiconductor characteristics of Si/Ge heterostructures doped in situ from the gas phase or from solid targets are comparable with those which can be synthesised through molecular beam epitaxy (MBE) or ultrahigh vacuum chemical vapour deposition (UHV-CVD). In particular, high charge carrier mobility levels can be attained in modulation-doped biased Si or Ge quantum wells as a basis for quantum-Hall effect structures and MODFETs. The sputter epitaxy process can be used for all possible types of electronic and opto-electronic components consisting of Si/Ge heterostructures.
(FR)
Le procédé d'épitaxie par pulvérisation cathodique permet de fabriquer des hétérostructures épitaxiales de Si, Ge et d'alliages de Si1-xGex. Les propriétés semi-conductrices d'hétérostructures de Si/Ge dopées in situ à partir de la phase gazeuse ou de cibles solides sont comparables à celles qui peuvent être synthétisées par épitaxie par faisceau moléculaire ou par dépôt chimique en phase vapeur dans des conditions d'ultravide. Il est notamment possible d'atteindre les mobilités élevées des porteurs de charge dans des puits quantiques de Si ou de Ge sollicités élastiquement, dopés par modulation, servant de bases à des structures à effet quantique-Hall et de transistors MODFET. Le procédé d'épitaxie par pulvérisation cathodique peut être mis en ÷uvre pour tous les composants électroniques et optoélectroniques réalisés à partir d'hétérostructures de Si/Ge.
Also published as
Latest bibliographic data on file with the International Bureau