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1. WO1996004668 - ELECTRICALLY RESISTIVE STRUCTURE

Publication Number WO/1996/004668
Publication Date 15.02.1996
International Application No. PCT/IB1995/000565
International Filing Date 17.07.1995
IPC
H01C 7/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
CRESISTORS
7Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
CPC
H01C 7/006
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
CRESISTORS
7Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
006Thin film resistors
Applicants
  • PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1 NL-5621 BA Eindhoven, NL
  • PHILIPS NORDEN AB [SE/SE]; Kottbygatan 5 Kista S-164 85 Stockholm, SE (SE)
Inventors
  • HEGER, Anton; NL
  • YOUNG, Edward, Willem, Albert; NL
Agents
  • STOLK, Steven, Adolph; Internationaal Octrooibureau B.V. P.O. Box 220 NL-5600 AE Eindhoven, NL
Priority Data
94202264.105.08.1994EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ELECTRICALLY RESISTIVE STRUCTURE
(FR) STRUCTURE RESISTIVE
Abstract
(EN)
An electrically resistive structure comprising a substrate (11) which is provided on at least one side with a first resistive film (13) and a second resistive film (17), the materials of these first and second films (13, 17) being mutually different, whereby an anti-diffusion film (15) is disposed between the first and second films (13, 17). The presence of such an anti-diffusion film (15) allows annealing of the resistive structure without significant degradation of its resistive properties. Suitable alloy materials for use in such an anti-diffusion film (15) include WTi, and particularly WTiN. Appropriate exemplary materials for the first resistive film (13) and second resistive film (17) include SiCr and CuNi alloys, respectively.
(FR)
L'invention concerne une structure résistive comprenant un substrat (11) pourvu, au moins sur un côté, d'une première couche résistive (13) et d'une seconde couche résistive (17), le matériau de la première couche (13) étant différent de celui de la seconde couche (17). Une couche antidiffusion (15) est placée entre la première et la seconde couche (13, 17). La présence d'une telle couche antidiffusion (15) permet de réaliser le recuit de la structure résistive sans que sa résistivité ne présente un affaiblissement important. Un alliage pouvant être utilisé dans une telle couche antidiffusion (15) est un alliage WTi, et particulièrement un alliage WTiN. Des alliages, donnés à titre d'exemples, convenant à la formation de la première couche résistive (13) et de la seconde couche résistive (17) sont, respectivement, un alliage SiCr et un alliage CuNi.
Also published as
Latest bibliographic data on file with the International Bureau