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1. WO1996004592 - METHOD OF REPETITIVELY IMAGING A MASK PATTERN ON A SUBSTRATE

Publication Number WO/1996/004592
Publication Date 15.02.1996
International Application No. PCT/IB1995/000592
International Filing Date 28.07.1995
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 7/70558
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
7055Exposure light control, in all parts of the microlithographic apparatus, e.g. pulse length control, light interruption
70558Dose control, i.e. achievement of a desired dose
G03F 7/70591
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70591Testing optical components
G03F 7/70641
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70641Focus
G03F 9/7026
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
70for microlithography
7003Alignment type or strategy, e.g. leveling, global alignment
7023Aligning or positioning in direction perpendicular to substrate surface
7026Focusing
G03F 9/7084
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
70for microlithography
7073Alignment marks and their environment
7084Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
Applicants
  • PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1 NL-5621 BA Eindhoven, NL
  • PHILIPS NORDEN AB [SE/SE]; Kottbygatan 5 Kista S-164 85 Stockholm, SE (SE)
Inventors
  • DIRKSEN, Peter; NL
  • VAN DER WERF, Jan, Evert; NL
Agents
  • COBBEN, Louis, Marie, Hubert; Internationaal Octrooibureau B.V. P.O. Box 220 NL-5600 AE Eindhoven, NL
Priority Data
94202240.102.08.1994EP
95200399.420.02.1995EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF REPETITIVELY IMAGING A MASK PATTERN ON A SUBSTRATE
(FR) PROCEDE DE REPRODUCTION REPETITIVE D'IMAGE DE MASQUE SUR UN SUBSTRAT
Abstract
(EN)
A method and apparatus for repetitively imaging a mask pattern (C) on a substrate (W) are described. The focusing of the projection lens system used for imaging and various other parameters of the apparatus and the projection lens system (PL), as well as illumination doses can be measured accurately and reliably, and measuring devices of the apparatus can be calibrated, by measuring an image of a new asymmetrical test mark formed in the photoresist on the substrate (W) by means of a projection beam (PB).
(FR)
La présente invention concerne un procédé de reproduction répétitive d'image de masque (C) sur un substrat (W). Selon le procédé de la présente invention, une mesure de l'image d'un nouveau repère test asymétrique formé dans le photorésist du substrat (W) au moyen d'un faisceau de projection (PB), permet de mesurer avec précision et fiabilité, d'une part, la mise au point du système d'objectif de projection servant à former l'image, ainsi que d'autres paramètres concernant le dispositif et le système d'objectif de projection (PL), d'autre part, les doses d'illumination, et permet également d'étalonner les instruments de mesure du dispositif.
Also published as
Latest bibliographic data on file with the International Bureau