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1. WO1996004101 - METHOD OF PLANARIZING POLYCRYSTALLINE DIAMONDS

Publication Number WO/1996/004101
Publication Date 15.02.1996
International Application No. PCT/US1995/005711
International Filing Date 05.05.1995
Chapter 2 Demand Filed 28.02.1996
IPC
B24B 37/04 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
04designed for working plane surfaces
H01L 21/3105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
CPC
B24B 37/042
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
04designed for working plane surfaces
042operating processes therefor
H01L 21/31053
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
31051Planarisation of the insulating layers
31053involving a dielectric removal step
Applicants
  • THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS [US/US]; 1123 South University Little Rock, AR 72204, US
Inventors
  • MALSHE, Ajay, P.; US
  • BROWN, William, D.; US
  • NASEEM, Hameed, A.; US
  • SCHAPER, Leonard, W.; US
Agents
  • GILBRETH, J., M., (Mark) ; Gilbreth & Adler, P.C. 5313 Pine Street Bellaire, TX 77401, US
Priority Data
08/282,79629.07.1994US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF PLANARIZING POLYCRYSTALLINE DIAMONDS
(FR) PROCEDE DE DRESSAGE DE DIAMANTS POLYCRISTALLINS
Abstract
(EN)
Disclosed is a method of planarizing a diamond film which generally includes orifices in the surface. The method includes first polishing the diamond film (STEP I) surface to reduce the surface roughness. Next, a filler material is applied (STEP III) to the surface of the film to fill the orifices in the film. Finally, the film is polished (STEP IV) to remove excess filler material and expose the diamond film surface. Also disclosed are planarized diamond film substrates having a polished surface of both diamond and filler material and a variation in thickness of less than 8 percent.
(FR)
Procédé de dressage d'un film diamanté présentant d'une manière générale des orifices à sa surface. Le procédé consiste d'abord à polir la surface du film diamanté (étape I) pour en réduire la rugosité. Ensuite, une matière de remplissage est appliquée sur la surface du film (étape III) pour combler les orifices. Enfin, le film est poli (étape IV) de manière à enlever l'excédent de matière de remplissage et dégager la surface du film diamanté. L'invention porte également sur des substrats de films diamantés dressés offrant une surface polie réalisée à la fois en diamants et en matière de remplissage, présentant une fluctuation d'épaisseur de moins de 8 %.
Also published as
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