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1. WO1996003772 - METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE FOR SURFACE MOUNTING, AND SEMICONDUCTOR DEVICE FOR SURFACE MOUNTING

Publication Number WO/1996/003772
Publication Date 08.02.1996
International Application No. PCT/IB1995/000539
International Filing Date 05.07.1995
IPC
H01L 21/60 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/68 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
68for positioning, orientation or alignment
H01L 21/762 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
76Making of isolation regions between components
762Dielectric regions
H01L 23/48 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/482 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
482consisting of lead-in layers inseparably applied to the semiconductor body
CPC
H01L 21/6835
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
H01L 21/76264
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
76Making of isolation regions between components
762Dielectric regions ; , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
7624using semiconductor on insulator [SOI] technology
76264SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
H01L 21/76289
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
76Making of isolation regions between components
762Dielectric regions ; , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
7624using semiconductor on insulator [SOI] technology
76264SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
76289Lateral isolation by air gap
H01L 2221/68359
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68359used as a support during manufacture of interconnect decals or build up layers
H01L 2221/68363
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68363used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
H01L 2221/68377
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68377with parts of the auxiliary support remaining in the finished device
Applicants
  • PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1 NL-5621 BA Eindhoven, NL
  • PHILIPS NORDEN AB [SE/SE]; Kottbygatan 5 Kista S-164 85 Stockholm, SE (SE)
Inventors
  • DEKKER, Ronald; NL
  • MAAS, Henricus, Godefridus, Rafael; NL
  • VERSLEIJEN, Martinus, Pieter, Johannes, Gerardus; NL
Agents
  • TANGENA, Antonius, Gerardus; Internationaal Octrooibureau B.V. P.O. Box 220 NL-5600 AE Eindhoven, NL
Priority Data
94202182.526.07.1994EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE FOR SURFACE MOUNTING, AND SEMICONDUCTOR DEVICE FOR SURFACE MOUNTING
(FR) PROCEDE DE FABRICATION D'UN DISPOSITIF A SEMI-CONDUCTEURS POUR MONTAGE EN SURFACE, ET DISPOSITIF A SEMI-CONDUCTEURS POUR MONTAGE EN SURFACE
Abstract
(EN)
The invention relates to a method of manufacturing a semiconductor device (1) for surface mounting. According to the invention, the semiconductor devices are packaged while they are still on a slice of semiconductor material, while the package leads are formed from the semiconductor material. In the method according to the invention, the semiconductor devices are manufactured without the necessity of a lead frame, bonding wires, or metal package leads. Thanks to the IC technologies at the wafer level, such as photolithography, etching, etc., the method according to the invention renders possible semiconductor devices of very small dimensions. In addition, integrated circuits with very many package leads can be manufactured in a simple manner without additional steps being necessary. The method according to the invention is thus comparatively inexpensive.
(FR)
L'invention se rapporte à un procédé de fabrication d'un dispositif à semi-conducteurs (1) pour montage en surface. Selon l'invention, les dispositifs à semi-conducteurs sont mis sous boîtier alors qu'ils se trouvent toujours sur une galette de matériau semi-conducteur et les sorties de boîtier sont formées dans le matériau semi-conducteur. Selon le procédé de l'invention, les dispositifs à semi-conducteurs sont fabriqués sans cadre de montage, fils d'interconnexion ou sorties de boîtier métalliques. Grâce aux technologies des circuits intégrés se rapportant à la tranche, telles que la photolithographie, la gravure, etc., le procédé de l'invention permet de réaliser des dispositifs à semi-conducteurs de très petites dimensions. De plus, les circuits intégrés dotés de très nombreuses sorties de boîtier peuvent être réalisés simplement, sans étapes de fabrication supplémentaires. Par conséquent, le procédé de l'invention est comparativement peu coûteux.
Also published as
Latest bibliographic data on file with the International Bureau