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1. WO1996003770 - SEMICONDUCTOR DEVICE WITH INTEGRATED RC NETWORK AND SCHOTTKY DIODE

Publication Number WO/1996/003770
Publication Date 08.02.1996
International Application No. PCT/US1995/009539
International Filing Date 28.07.1995
Chapter 2 Demand Filed 28.02.1996
IPC
H01L 27/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
CPC
H01L 27/0248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0248for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
H01L 27/0251
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0248for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
0251for MOS devices
H01L 27/0259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0248for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
0251for MOS devices
0259using bipolar transistors as protective elements
Applicants
  • CALIFORNIA MICRO DEVICES, INC. [US/US]; 215 Topaz Street Milpitas, CA 95035, US
Inventors
  • RAO, Bhasker; US
  • LEUSCHNER, Horst; US
  • CHALAKA, Ashok; US
Agents
  • TEST, Aldo, J. ; Flehr, Hohbach, Test, Albritton & Herbert Suite 3400 4 Embarcadero Center San Francisco, CA 94111-4187, US
Priority Data
08/282,03328.07.1994US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE WITH INTEGRATED RC NETWORK AND SCHOTTKY DIODE
(FR) DISPOSITIF A SEMI-CONDUCTEURS A CIRCUIT RESISTANCE-CONDENSATEUR INTEGRE ET DIODE SCHOTTKY
Abstract
(EN)
A semiconductor device (100) which has a resistor (12), a capacitor (13), a Schottky diode (11), and an ESD protection device (101) all formed on a single semiconductor substrate. The resistor (12) and the capacitor (13) are coupled together in series. The Schottky diode and the ESD protection device are coupled in parallel to the series connection of the resistor (12) and capacitor (13).
(FR)
La présente invention concerne un dispositif à semi-conducteurs (100) comportant une résistance (12), un condensateur (13), une diode Schottky (11) et un dispositif de protection anti-décharges électrostatiques (101) tous réalisés sur un seul et même substrat pour semi-conducteur. La résistance (12) et le condensateur (13) sont couplés ensemble en série. La diode Schottky et le dispositif de protection anti-décharges électrostatiques sont couplés en parallèle à la connexion série de la résistance (12) et du condensateur (13).
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