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1. WO1996002964 - A TRANSFERRED ELECTRON EFFECT DEVICE

Publication Number WO/1996/002964
Publication Date 01.02.1996
International Application No. PCT/IB1995/000550
International Filing Date 10.07.1995
IPC
H01L 47/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
47Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Gunn-effect devices
H01S 5/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave
H01S 5/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- hetero-structures
CPC
H01L 47/026
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
47Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
02Gunn-effect devices ; or transferred electron devices
026Gunn diodes
H01S 5/2009
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
2004Confining in the direction perpendicular to the layer structure
2009by using electron barrier layers
H01S 5/3215
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- heterostructures
3211characterised by special cladding layers, e.g. details on band-discontinuities
3215graded composition cladding layers
Applicants
  • PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1 NL-5621 BA Eindhoven, NL
  • PHILIPS NORDEN AB [SE/SE]; Kottbygatan 5, Kista S-164 85 Stockholm, SE (SE)
  • PHILIPS ELECTRONICS UK LIMITED [GB/GB]; 420-430 London Road Croydon CR9 3QR, GB (GB)
Inventors
  • BATTERSBY, Stephen, John; GB
Agents
  • STEVENS, Brian, Thomas; Internationaal Octrooibureau B.V. P.O. Box 220 NL-5600 AE Eindhoven, NL
Priority Data
9414311.215.07.1994GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A TRANSFERRED ELECTRON EFFECT DEVICE
(FR) DISPOSITIF A EFFET DE TRANSFERT D'ELECTRONS
Abstract
(EN)
A semiconductor body (2) has an active region (6) of n conductivity type formed of a material having a relatively low mass, high mobility conduction band main minimum and at least one relatively high mass, low mobility conduction band satellite minimum and an injector region (9) defining a potential barrier (P) to the flow of electrons into the active region (6) of a height such that, in operation of the device, electrons with sufficient energy to surmount the barrier (P) provided by the injector region (9) are emitted into the active region (6) with an energy comparable to that of the at least one relatively high mass, low mobility conduction band satellite minimum. An electron containing well region (10a, 10b) of a material different from that of the active region (6) and of the injector region (9) is provided between the injector region (9) and the active region (6) for inhibiting the spread of a depletion region into the active region (6) during operation of the device.
(FR)
Un corps semiconducteur (2) comporte une région active (6) à conductivité de type n, constituée d'un matériau présentant un minimum principal en matière de bande de conduction, à forte mobilité et masse relativement faible et au moins un minimum, propre aux satellites, en matière de bande de conduction à faible mobilité et masse élevée, ainsi qu'une région d'injection (9) définissant une barrière de potentiel (P) contre l'écoulement d'électrons dans la région active (6), d'une hauteur telle que, pendant le fonctionnement du dispositif, les électrons dotés d'une énergie suffisante pour sauter la barrière (P) définie par la région d'injection (9) soient émis dans la région active (6) avec une énergie comparable à celle du minimum propre aux satellites en matière de bande de conduction à masse relativement élevée et faible mobilité. Une région de puits (10a, 10b), contenant des électrons et constituée d'un matériau différent de celui de la région active (6) et de la région d'injection (9) est disposée entre ces deux régions (6, 9) pour empêcher l'extension d'une zone de déplétion dans la région active (6) pendant le fonctionnement de ce dispositif.
Also published as
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