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1. WO1996002944 - AN ANTI-FUSE STRUCTURE AND METHOD FOR MAKING SAME

Publication Number WO/1996/002944
Publication Date 01.02.1996
International Application No. PCT/US1995/008795
International Filing Date 12.07.1995
Chapter 2 Demand Filed 29.01.1996
IPC
H01L 23/525 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
525with adaptable interconnections
CPC
H01L 23/5252
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
525with adaptable interconnections
5252comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Y10S 148/055
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
148Metal treatment
055Fuse
Applicants
  • VLSI TECHNOLOGY, INC. [US/US]; 1109 McKay Drive San Jose, CA 95131, US
Inventors
  • PRAMANIK, Dipankar; US
  • NARIANI, Subhash, R.; US
Agents
  • HICKMAN, Paul, L. ; P.O. Box 61059 Palo Alto, CA 94306, US
Priority Data
08/275,18714.07.1994US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) AN ANTI-FUSE STRUCTURE AND METHOD FOR MAKING SAME
(FR) STRUCTURE ANTIFUSIBLE ET SON PROCEDE DE FABRICATION
Abstract
(EN)
An anti-fuse structure formed in accordance with the present invention includes a conductive layer base. A layer of anti-fuse material (38) overlies the conductive base layer (36). On top of the anti-fuse layer (38) is an insulating layer (40), in which a via hole (42) is formed to the anti-fuse layer (38). The lateral dimension of the via hole (42) is less than about 0.8 microns. Provided in the via hole (42) is a conductive non-Al plug (47) filling the via (42) as well as a conductive barrier material (44) such as TiN or TiW to contact the anti-fuse material (38) and overlie the insulating layer (40). Tungsten is effectively used as the non-Al plug (47). A top layer of Al (48) is also possible included in the structure over the conductive barrier material (44). The structure is then programmable by application of a programming voltage and readable by application of a sensing voltage, which is lower than the programming voltage.
(FR)
Une structure antifusible produite selon la présente invention comprend une couche de base conductrice. Une couche d'un matériau (38) antifusible est située au-dessus de la couche de base conductrice (36). Une couche isolante (40), formée au-dessus de la couche antifusible (38), comporte un trou traversant (42) qui s'étend jusqu'à ladite couche antifusible (38). La dimension latérale du trou (42) est inférieure à environ 0,8 microns. Le trou traversant (42) est pourvu d'un tampon conducteur (47), non composé d'Al, qui remplit le trou (42), ainsi que d'un matériau d'arrêt conducteur (44), tel que TiN ou TiW, qui entre en contact avec le matériau antifusible (38) et recouvre la couche isolante (40). Du tungstène peut être utilisé efficacement comme tampon (47) non composé d'Al. Une couche supérieure d'Al (48) peut éventuellement être intégrée dans la structure au-dessus du matériau d'arrêt conducteur (44). Cette structure peut alors être programmée par application d'une tension de programmation, et peut être lue par application d'une tension de détection inférieure à la tension de programmation.
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