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1. WO1996002940 - DEVICE RELIABILITY OF MOS DEVICES USING SILICON RICH PLASMA OXIDE FILMS

Publication Number WO/1996/002940
Publication Date 01.02.1996
International Application No. PCT/US1995/009107
International Filing Date 19.07.1995
Chapter 2 Demand Filed 20.02.1996
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 23/532 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
CPC
H01L 21/02126
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02126the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H01L 21/02129
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02126the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
02129the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
H01L 21/02164
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02164the material being a silicon oxide, e.g. SiO2
H01L 21/0217
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
0217the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
H01L 21/022
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
022the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
H01L 21/02211
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02205the layer being characterised by the precursor material for deposition
02208the precursor containing a compound comprising Si
02211the compound being a silane, e.g. disilane, methylsilane or chlorosilane
Applicants
  • VLSI TECHNOLOGY, INC. [US/US]; 1109 McKay Drive San Jose, CA 95131, US
Inventors
  • JAIN, Vivek; US
  • PRAMANIK, Dipankar; US
  • NARIANI, Subhash, R.; US
  • CHANG, Kuang-Yeh; US
Agents
  • KREBS, Robert, E.; Burns, Doane, Swecker & Mathis George Mason Building Washington & Prince Streets P.O. Box 1404 Alexandria, VA 22313-1404, US
Priority Data
08/277,09019.07.1994US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) DEVICE RELIABILITY OF MOS DEVICES USING SILICON RICH PLASMA OXIDE FILMS
(FR) FIABILITE MATERIELLE DE COMPOSANTS MOS OBTENUE AU MOYEN DE COUCHES D'OXYDE ENRICHIES AVEC DU SILICIUM PRODUITES PAR DEPOT CHIMIQUE EN PHASE VAPEUR ACTIVE AU PLASMA
Abstract
(EN)
The invention relates to MOS devices and methods for fabricating MOS devices having multilayer metallization. In accordance with preferred embodiments, internal passivation is used for suppressing device degradation from internal sources. Preferred devices and methods for fabricating such devices include formation of one or more oxide layers which are enriched with silicon to provide such an internal passivation and improve hot carrier lifetime. Preferred methods for fabricating MOS devices having multi-level metallization include modifying the composition of a PECVD oxide film and, in some embodiments, the location and thickness of such an oxide. In an exemplary preferred embodiment, PECVD oxide layers are modified by changing a composition to a silicon enriched oxide.
(FR)
L'invention concerne des composants MOS et des procédés permettant de fabriquer de tels composants pourvus de plusieurs couches de métallisation. Selon des modes de réalisation préférés, on procède à une passivation interne pour éviter une dégradation du composant due à des sources internes. Des dispositifs préférés sont fabriqués selon des procédés comprenant la formation d'une ou de plusieurs couches d'oxyde qui sont enrichies avec du silicium pour produire une telle passivation interne et améliorer la durée de vie des porteurs chauds. Des procédés préférés de fabrication de composants MOS pourvus de plusieurs niveaux de métallisation comprennent la modification de la composition d'une couche d'oxyde appliquée selon un procédé de dépôt chimique en phase vapeur activé au plasma, et également, dans certains modes de réalisation, la modification de l'emplacement et de l'épaisseur d'une telle couche d'oxyde. Dans un mode préféré, donné à titre d'exemple, les couches d'oxyde appliquées selon un procédé de dépôt chimique en phase vapeur activée au plasma sont modifiées, cette modification consistant à enrichir l'oxyde avec du silicium.
Also published as
Latest bibliographic data on file with the International Bureau