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1. WO1996002938 - FILLING HOLES AND THE LIKE IN SUBSTRATES

Publication Number WO/1996/002938
Publication Date 01.02.1996
International Application No. PCT/GB1995/001572
International Filing Date 04.07.1995
IPC
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H05K 3/40 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
40Forming printed elements for providing electric connections to or between printed circuits
CPC
H01L 21/76819
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76819Smoothing of the dielectric
H01L 21/76843
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76841Barrier, adhesion or liner layers
76843formed in openings in a dielectric
H01L 21/76846
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76841Barrier, adhesion or liner layers
76843formed in openings in a dielectric
76846Layer combinations
H01L 21/76882
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
76882Reflowing or applying of pressure to better fill the contact hole
H05K 2201/0355
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
2201Indexing scheme relating to printed circuits covered by H05K1/00
03Conductive materials
0332Structure of the conductor
0335Layered conductors or foils
0355Metal foils
H05K 2203/0278
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
2203Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
02Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
0278Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
Applicants
  • ELECTROTECH LIMITED [GB/GB]; Thornbury Laboratories Littleton-upon-Severn Bristol BS12 1NP, GB (AllExceptUS)
  • DOBSON, Christopher, David [GB/GB]; GB (UsOnly)
  • McGEOWN, Arthur, John [GB/GB]; GB (UsOnly)
Inventors
  • DOBSON, Christopher, David; GB
  • McGEOWN, Arthur, John; GB
Agents
  • DUNLOP, Brian, Kenneth, Charles ; Wynne-Jones, Laine & James 22 Rodney Road Cheltenham Gloucestershire GL50 1JJ, GB
Priority Data
9414145.413.07.1994GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) FILLING HOLES AND THE LIKE IN SUBSTRATES
(FR) REMPLISSAGE DE TROUS ET ANALOGUE DANS DES SUBSTRATS
Abstract
(EN)
A method of filling holes (12) in a layer (11) on a semiconductor wafer (10) is described. An aluminium foil (13) is laid over the layer (11) to close off the holes (12). Elevated temperatures and pressures are then applied causing localised flow of aluminium into the holes. The foil (13) may be provided with a carrier layer (17) and a barrier or lubricating layer (14 to 16).
(FR)
L'invention concerne un procédé de remplissage de trous (12) dans une couche (11) d'une tranche de semi-conducteur (10). Une feuille en aluminium (13) est déposée sur la couche (11) de façon à obturer les trous (12). On applique alors des températures et des pressions élevées permettant d'assurer l'écoulement localisé de l'aluminium dans les trous. La feuille (13) peut comporter une couche de support (17) ainsi qu'une couche barrière ou une couche lubrifiante (14 à 16).
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