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1. WO1994029898 - METHOD OF ELIMINATING POLY END CAP ROUNDING EFFECT

Publication Number WO/1994/029898
Publication Date 22.12.1994
International Application No. PCT/US1994/006224
International Filing Date 03.06.1994
Chapter 2 Demand Filed 24.10.1994
IPC
H01L 21/8247 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8246Read-only memory structures (ROM)
8247electrically-programmable (EPROM)
CPC
H01L 27/11521
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11521characterised by the memory core region
Applicants
  • NATIONAL SEMICONDUCTOR CORPORATION [US]/[US]
Inventors
  • BERGEMONT, Albert
Agents
  • RODDY, Richard, J.
  • BOWLES, Sharon, Margaret
Priority Data
08/075,81311.06.1993US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF ELIMINATING POLY END CAP ROUNDING EFFECT
(FR) PROCEDE POUR ELIMINER L'EFFET D'ARRONDISSAGE D'UN EMBOUT DE POLYSILICIUM
Abstract
(EN)
A two step mask/etch process for fabricating a poly end cap on field oxide begins with the formation of a layer of polysilicon (106) over the field oxide island (100) and over the gate oxide material (104) on the substrate (102) such that the layer of polysilicon (106) spans the interface between the substrate (102) and the field oxide (100). In a first mask/etch step, the layer of polysilicon is patterned utilizing a photoresist mask to form a line of polysilicon that extends in the x-direction such that the two longitudinal edges of the line are formed over the field oxide and such that the line extends over the field oxide in the x-direction. In a second mask/etch step, the line of polysilicon (106) is patterned utilizing a photoresist mask (108) to define a substantially rectangular poly end cap over the field oxide (100).
(FR)
L'invention se rapporte à un procédé de masquage/attaque en deux étapes pour fabriquer un embout de polysilicium sur un oxyde épais, dans lequel on commence par former une couche de polysilicium (106) sur l'îlot d'oxyde épais (100) et sur le matériau à oxyde de grille (104) du substrat (102), pour que cette couche de polysilicium (106) recouvre l'interface entre le substrat (102) et l'oxyde épais (100). Dans une première étape de masquage/attaque, le motif de la couche de polysilicium est produit au moyen d'un masque à photoréserve, afin de former une ligne de polysilicium qui s'étend dans la direction de l'axe des x, pour que les deux bords longitudinaux de la ligne soient formés sur l'oxyde épais et pour que la ligne s'étende sur l'oxyde épais dans la direction de l'axe des x. Dans une seconde phase de masquage/attaque, le tracé de la ligne de polysilicium (106) est produit au moyen d'un masque à photoréserve (108), afin de définir un embout de polysilicium essentiellement rectangulaire sur l'oxyde épais (100).
Also published as
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