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Machine translation
1. (WO1992012537) METHOD FOR MANUFACTURING MEMORY CELL OF DRAM
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1992/012537    International Application No.:    PCT/JP1991/001797
Publication Date: 23.07.1992 International Filing Date: 27.12.1991
Chapter 2 Demand Filed:    31.07.1992    
IPC:
H01L 21/02 (2006.01), H01L 21/316 (2006.01), H01L 21/8242 (2006.01), H01L 27/108 (2006.01)
Applicants: OHMI, Tadahiro [JP/JP]; (JP)
Inventors: OHMI, Tadahiro; (JP)
Agent: FUKUMORI, Hisao; 12, Honshio-cho, Shinjuku-ku, Tokyo 160 (JP)
Priority Data:
3/10006 01.01.1991 JP
Title (EN) METHOD FOR MANUFACTURING MEMORY CELL OF DRAM
(FR) PROCEDE DE FABRICATION DE CELLULES DE MEMOIRE RAM DYNAMIQUE
Abstract: front page image
(EN)A method for manufacturing memory cells of a DRAM, which are manufactured easily with a high yield, and have high breakdown voltages and large capacitances. In the method, after forming a metallic thin film comprising at least one layer on a substrate, the surface of the metallic thin film is directly oxidized, and the thin film of a metallic oxide is formed on the surface of the metallic thin film.
(FR)Procédé de fabrication de cellules de mémoire RAM dynamique, permettant une fabrication facile à haut rendement de cellules présentant une tension de claquage et une capacitance élevées. Selon ce procédé, on forme sur un substrat une couche mince métallique composé d'au moins une couche, on oxyde directement la surface de la couche mince métallique, et l'on forme à la surface de la couche mince métallique la couche mince d'oxyde métallique.
Designated States: US.
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, MC, NL, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)