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1. (WO1992010837) SINGLE TRANSISTOR EEPROM MEMORY CELL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1992/010837 International Application No.: PCT/US1991/008507
Publication Date: 25.06.1992 International Filing Date: 13.11.1991
Chapter 2 Demand Filed: 25.06.1992
IPC:
G11C 16/04 (2006.01) ,G11C 16/08 (2006.01) ,G11C 16/26 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
04
using variable threshold transistors, e.g. FAMOS
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
08
Address circuits; Decoders; Word-line control circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
26
Sensing or reading circuits; Data output circuits
Applicants:
NEXCOM TECHNOLOGY, INC. [US/US]; 1031 E. Duane Avenue, Suite H Sunnyvale, CA 94086, US
Inventors:
CHALLA, Nagesh; US
Agent:
SCHATZEL, Thomas, E.; 3211 Scott Boulevard Santa Clara, CA 95054, US
BLUMBACH WESER BERGEN KRAMER ZWIRNER HOFFMANN; Sonnenberger Strasse 100 D-6200 Wiesbaden, DE
Priority Data:
625,80711.12.1990US
Title (EN) SINGLE TRANSISTOR EEPROM MEMORY CELL
(FR) CELLULE DE MEMOIRE EEPROM A UN SEUL TRANSISTOR
Abstract:
(EN) A single-transistor non-volatile memory cell (50) MOS transistor (54) with a floating gate (56) and a control gate (58) using two levels of polysilicon and a tunnel dielectric that overlaps the drain area (60) wherein a tunneling of charge can take place between the drain (60) and the floating gate (56) by means of a system of applied voltages to the control gate (58) and drain (60).
(FR) L'invention se rapporte à un transistor MOS (54) avec cellule de mémoire rémanente à un seul transistor (50), qui comporte une grille flottante (56) et une grille de commande (58) utilisant deux niveaux de polysilicium et un diélectrique tunnel, qui chevauche la zone de drain (60), et dans lequel un effet tunnel concernant la charge peut se produire entre le drain (60) et la grille flotttante (56) grâce à un système de tensions s'appliquant à la grille de commande (58) et au drain (60).
Designated States: JP
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0561930JPH06506310