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1. (WO1992010308) MINIMIZATION OF PARTICLE GENERATION IN CVD REACTORS AND METHODS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1992/010308 International Application No.: PCT/US1991/009407
Publication Date: 25.06.1992 International Filing Date: 11.12.1991
Chapter 2 Demand Filed: 09.07.1992
IPC:
C23C 16/44 (2006.01) ,C23C 16/513 (2006.01) ,H01J 37/32 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
513
using plasma jets
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
Applicants:
LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway Fremont, CA 94538-6470, US
Inventors:
TAPPAN, James, E.; US
YASUDA, Arthur, K.; US
DENISON, Dean, R.; US
MUNDT, Randall, S.; US
Agent:
PETERSON, James, W.; Burns, Doane, Swecker & Mathis Washington and Prince Streets P.O. Box 1404 Alexandria, VA 22313-1404, US
Priority Data:
623,09011.12.1990US
Title (EN) MINIMIZATION OF PARTICLE GENERATION IN CVD REACTORS AND METHODS
(FR) PROCEDES REDUISANT AU MINIMUM LA PRODUCTION DE PARTICULES DANS DES REACTEURS DE DEPOT CHIMIQUE EN PHASE VAPEUR
Abstract:
(EN) A method of controlling deposition quality of line-of-sight and target surfaces in a plasma-enhanced chemical vapor deposition apparatus. Apparatus for controlling deposition quality of line-of-sight and target surfaces in a plasma-enhanced chemical vapor deposition apparatus. The apparatus includes a plasma shield (6) having a line-of-sight surface (10) and a plasma target (7) having a target surface. The line-of-sight surface (10) defines a bore (9) through the plasma shield (6) and is located out of direct contact with a plasma stream, such as oxygen, which passes from a plasma chamber (2), through the bore (9), and into a reaction chamber (3). A semiconductor specimen is mounted on a support (5) in the reaction chamber (3). The target surface surrounds the specimen. The line-of-sight and target surfaces (10) are maintained at a substantially constant temperature by circulating a fluid medium through fluid passages (11) in the plasma shield (6) and plasma target (7). The plasma target (7) can include a removable plate (33) having the target surface on one side thereof. The plasma shield can include a removable gas ring (24) for ejecting gas, such as SiH4, into the bore.
(FR) Procédé de régulation de la qualité du dépôt de surfaces de visée et cible dans un appareil de dépôt chimique en phase vapeur activée au plasma. L'invention concerne également un appareil de régulation de la qualité du dépôt de surfaces de visée et cible dans un appareil de dépôt chimique en phase vapeur activée au plasma. L'appareil comprend un écran à plasma (6) doté d'une surface de visée (10) et d'une cible de plasma (7) comportant une surface cible. La surface de visée (10) définit un alésage (9) à travers l'écran à plasma (6) et n'est pas en contact direct avec un courant de plasma, tel que de l'oxygène, passant de la chambre de plasma (2), par l'intermédiaire de l'alésage (9), dans une chambre de réaction (3). Un échantillon à semiconducteur est monté sur un support (5) dans la chambre de réaction (3). La surface cible entoure l'échantillon. Les surfaces de visée et cible (10) sont maintenues à une température constante par circulation d'un milieu fluide dans les passages de fluide (11) se trouvant dans l'écran à plasma (6) et la cible de plasma (7). Ladite cible de plasma (7) peut comprendre une plaque amovible (33) sur une face de laquelle se trouve la surface cible. L'écran à plasma peut comprendre un anneau à gaz amovible (24) destiné à éjecter du gaz tel que SiH4 dans l'alésage.
Designated States: KR
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, MC, NL, SE)
Publication Language: English (EN)
Filing Language: English (EN)