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1. (WO1992009719) METHOD FOR THE DEPOSITION OF GROUP 15 AND/OR GROUP 16 ELEMENTS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1992/009719 International Application No.: PCT/AU1991/000533
Publication Date: 11.06.1992 International Filing Date: 19.11.1991
Chapter 2 Demand Filed: 22.06.1992
IPC:
C07F 9/90 (2006.01) ,C23C 16/18 (2006.01) ,H01L 21/365 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
9
Compounds containing elements of the 5th Group of the Periodic System
90
Antimony compounds
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
06
characterised by the deposition of metallic material
18
from metallo-organic compounds
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
365
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants:
THE COMMONWEALTH INDUSTRIAL GASES LIMITED [AU/AU]; 500 Pacific Highway St. Leonards, NSW 2065, AU (AllExceptUS)
MONASH UNIVERSITY [AU/AU]; Wellington Road Clayton, VIC 3168, AU (AllExceptUS)
AUSTRALIAN AND OVERSEAS TELECOMMUNICATIONS CORPORATION LIMITED [AU/AU]; 199 William Street Melbourne, VIC 3000, AU (AllExceptUS)
PAIN, Geoffrey, Norman [AU/AU]; AU (UsOnly)
Inventors:
PAIN, Geoffrey, Norman; AU
Agent:
CORBETT, Terence, G. ; Davies Collison Cave 1 Little Collins Street Melbourne, VIC 3000, AU
Priority Data:
PK 350023.11.1990AU
Title (EN) METHOD FOR THE DEPOSITION OF GROUP 15 AND/OR GROUP 16 ELEMENTS
(FR) PROCEDE DE DEPOT D'ELEMENTS DE GROUPE 15 ET/OU DE GROUPE 16
Abstract:
(EN) The present invention relates to a method for the metal organic chemical vapour deposition of a Group 15 and/or a Group 16 element on a substrate, characterized in that the method comprises employing as a feedstock at least one compound of the formula R2EER2, RE'E'R, R2EE'R, R2EE'ER2, RE(E'R)2 or E(E'R)3, wherein E is a Group 15 element, E' is a Group 16 element and R is an organic ligand. The present invention also provides methods for p-type doping of a II-VI semiconductor and N-type doping of a III-V semiconductor involving the method described above. A novel compound, ethyltellurodiethylstibine (Et2SbTeEt) is also described.
(FR) La présente invention se rapporte à un procédé de dépôt chimique, organique et métallique en phase vapeur d'un élément de groupe 15 et/ou de groupe 16 sur un substrat, procédé qui se caractérise en ce qu'il utilise comme charge d'alimentation au moins un composé des formules R2EER2, RE'E'R, R2EE'R, R2EE'ER2, RE(E'R)2 or E(E'R)3, où E représente un élément de groupe 15, E' représente un élément de groupe 16 et R représente un ligand organique. La présente invention se rapporte aussi à des procédés de dopage de type-p d'un semi-conducteur II-VI, et de dopage de type-N d'un semi-conducteur III-V, selon le procédé décrit ci-dessus. Un nouveau composé, l'éthyltellurodiéthylstibine (Et2SbTeEt) est aussi décrit.
Designated States: AT, AU, BB, BG, BR, CA, CH, CS, DE, DK, ES, FI, GB, HU, JP, KP, KR, LK, LU, MC, MG, MW, NL, NO, PL, RO, SD, SE, SU, US
European Patent Office (AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LU, NL, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, ML, MR, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
AU1991090152